| Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100) PD Kirsch, CS Kang, J Lozano, JC Lee, JG Ekerdt J. Appl. Phys. 91, 4353, 2003 | 317 | 2003 |
| A comparative study on the electrical conduction mechanisms of thin films on Pt and electrodes CS Hwang, BT Lee, CS Kang, JW Kim, KH Lee, HJ Cho, H Horii, WD Kim, ... Journal of applied physics 83 (7), 3703-3713, 1998 | 214 | 1998 |
| Bonding states and electrical properties of ultrathin gate dielectrics CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ... Applied Physics Letters 81 (14), 2593-2595, 2002 | 209 | 2002 |
| Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and thin films CS Hwang, BT Lee, CS Kang, KH Lee, HJ Cho, H Hideki, WD Kim, SI Lee, ... Journal of applied physics 85 (1), 287-295, 1999 | 191 | 1999 |
| Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs K Onishi, R Choi, CS Kang, HJ Cho, YH Kim, RE Nieh, J Han, ... IEEE Transactions on Electron Devices 50 (6), 1517-1524, 2003 | 170 | 2003 |
| MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics L Kang, K Onishi, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh, S Gopalan, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 154 | 2000 |
| The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode CS Kang, HJ Cho, R Choi, YH Kim, CY Kang, SJ Rhee, C Choi, MS Akbar, ... IEEE transactions on electron devices 51 (2), 220-227, 2004 | 137 | 2004 |
| Improvement of surface carrier mobility of HfO/Sub 2/MOSFETs by high-temperature forming gas annealing K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, RE Nieh, SA Krishnan, ... IEEE Transactions on Electron Devices 50 (2), 384-390, 2003 | 133 | 2003 |
| Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/) BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 128 | 2000 |
| Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications CS Kang, HJ Cho, YH Kim, R Choi, K Onishi, A Shahriar, JC Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 125 | 2003 |
| Three dimensional semiconductor memory devices SM Hwang, H Kim, C Kang, W Cho, JJ Shim US Patent 8,809,938, 2014 | 113 | 2014 |
| High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by post-deposition anneal MS Akbar, S Gopalan, HJ Cho, K Onishi, R Choi, R Nieh, CS Kang, ... Applied physics letters 82 (11), 1757-1759, 2003 | 102 | 2003 |
| High-quality ultra-thin HfO/sub 2/gate dielectric MOSFETs with TaN electrode and nitridation surface preparation R Choi, CS Kang, BH Lee, K Onishi, R Nieh, S Gopalan, E Dharmarajan, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 98 | 2001 |
| Deposition and electrical characterization of very thin SrTiO3 films for ultra large scale integrated dynamic random access memory application CS Hwang, SO Park, CS Kang, HJ Cho, HK Kang, ST Ahn, MYLMY Lee Japanese journal of applied physics 34 (9S), 5178, 1995 | 96 | 1995 |
| A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs Y Shin, J Choi, C Kang, C Lee, KT Park, JS Lee, J Sel, V Kim, B Choi, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 95 | 2005 |
| High-k dielectrics and MOSFET characteristics JC Lee, HJ Cho, CS Kang, S Rhee, YH Kim, R Choi, CY Kang, C Choi, ... IEEE International Electron Devices Meeting 2003, 4.4. 1-4.4. 4, 2003 | 93 | 2003 |
| Evaluation of silicon surface nitridation effects on ultra-thin gate dielectrics R Nieh, R Choi, S Gopalan, K Onishi, CS Kang, HJ Cho, S Krishnan, ... Applied physics letters 81 (9), 1663-1665, 2002 | 90 | 2002 |
| Thermally robust Ta/sub 2/O/sub 5/capacitor for the 256-Mbit DRAM KW Kwon, CS Kang, SO Park, HK Kang, ST Ahn IEEE Transactions on Electron Devices 43 (6), 919-923, 1996 | 87 | 1996 |
| Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing RE Nieh, CS Kang, HJ Cho, K Onishi, R Choi, S Krishnan, JH Han, ... IEEE Transactions on electron devices 50 (2), 333-340, 2003 | 84 | 2003 |
| Vertical structure nonvolatile memory devices BI Choe, SI Chang, C Kang, JS Lim US Patent 8,513,729, 2013 | 81 | 2013 |
Rino ChoiProfessor of Materials Science and Eng., Inha University在 inha.ac.kr 的電子郵件地址已通過驗證