Dr. Aminul Islam

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Mohammad HasanDepartment of Electronics Engineering, Aligarh Muslim University在 amu.ac.in 的電子郵件地址已通過驗證
Dr. Vikash KumarAssistant Professor, Christ University在 ieee.org 的電子郵件地址已通過驗證
Amit Krishna Dwivedi, PhDAssistant Professor, University of Warwick, Coventry, UK在 ieee.org 的電子郵件地址已通過驗證
Rishab MehraApple Inc, The University of Texas at Austin在 utexas.edu 的電子郵件地址已通過驗證
Dr. Manisha GuduriSchool of Computing and Informatics, University of Louisiana at Lafayette在 ieee.org 的電子郵件地址已通過驗證
Santashraya PrasadBirla Insitute Of technology在 bitmesra.ac.in 的電子郵件地址已通過驗證
M. W. AkramDept. of ECE, Jamia Millia Islamia, New Delhi在 jmi.ac.in 的電子郵件地址已通過驗證
Dr. Sachin Dattatray PableHOD Electronics and Telecommunication. Government Polytechnic在 gov.in 的電子郵件地址已通過驗證
Anumita SenguptaIndian Institute of Technology Kharagpur在 iitkgp.ac.in 的電子郵件地址已通過驗證
Sarika TyagiLecturer I London Metropolitan University, London. UK在 londonmet.ac.uk 的電子郵件地址已通過驗證
Dr. Mohd Ajmal KafeelAssociate Professor, University Women's Polytechnic, Aligarh Muslim University, AMU, Aligarh在 amu.ac.in 的電子郵件地址已通過驗證
Nitin AnandUniversity of Wisconsin, Madison在 wisc.edu 的電子郵件地址已通過驗證
Abhijeet PasumarthyNvidia, Qualcomm, UC San Diego, BIT Mesra在 nvidia.com 的電子郵件地址已通過驗證
Sudip KunduAssistant Professor of Electronics and Communication Engg, National Institute of Technology Rourkela在 nitrkl.ac.in 的電子郵件地址已通過驗證
Tughrul ArslanUniversity of Edinburgh在 ed.ac.uk 的電子郵件地址已通過驗證
Prashant GuptaNXP Semiconductors在 nxp.com 的電子郵件地址已通過驗證
Debosmit MajumderEngineer at Apple在 eng.ucsd.edu 的電子郵件地址已通過驗證
vivek agarwalProfessor of Department of Electrical Engg, Indian Institute of Technology-Bombay在 ee.iitb.ac.in 的電子郵件地址已通過驗證
Shree Prakash TiwariProfessor, Department of Electrical Engineering, Indian Institute of Technology Jodhpur在 iitj.ac.in 的電子郵件地址已通過驗證
Vivek DixitAssociate Professor, Department of E & ECE, IIT Kharagpur, India在 ece.iitkgp.ac.in 的電子郵件地址已通過驗證

追蹤

Dr. Aminul Islam

Professor, Birla Institute of Technology (Deemed to be University), MESRA, Ranchi, India-835215

在 ieee.org 的電子郵件地址已通過驗證 - 首頁

Nanoelectronics HEMT-TFET SRAM MTJ-MRAM RRAM


標題按引用次數排序按年份排序按標題排序	引用次數引用次數	年份
Leakage characterization of 10T SRAM cell A Islam, M Hasan IEEE transactions on electron devices 59 (3), 631-638, 2012	186	2012
Variation tolerant differential 8T SRAM cell for ultralow power applications S Pal, A Islam IEEE transactions on computer-aided design of integrated circuits and …, 2015	149	2015
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell A Islam, M Hasan Microelectronics Reliability 52 (2), 405-411, 2012	119	2012
9-T SRAM cell for reliable ultralow-power applications and solving multibit soft-error issue S Pal, A Islam IEEE Transactions on Device and Materials Reliability 16 (2), 172-182, 2016	103	2016
Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII A Imran, M Hasan, A Islam, SA Abbasi IEEE transactions on Nanotechnology 11 (6), 1100-1109, 2012	74	2012
Characterization of half-select free write assist 9T SRAM cell S Pal, S Bose, WH Ki, A Islam IEEE transactions on electron devices 66 (11), 4745-4752, 2019	72	2019
Half-select-free low-power dynamic loop-cutting write assist SRAM cell for space applications S Pal, S Bose, WH Ki, A Islam IEEE Transactions on Electron Devices 67 (1), 80-89, 2019	65	2019
Variability aware low leakage reliable SRAM cell design technique A Islam, M Hasan Microelectronics reliability 52 (6), 1247-1252, 2012	63	2012
Soft-error resilient read decoupled SRAM with multi-node upset recovery for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Electron Devices 68 (5), 2246-2254, 2021	61	2021
Highly stable low power radiation hardened memory-by-design SRAM for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Circuits and Systems II: Express Briefs 68 (6), 2147-2151, 2020	60	2020
Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications S Pal, S Mohapatra, WH Ki, A Islam IEEE Transactions on Circuits and Systems I: Regular Papers 68 (6), 2470-2480, 2021	56	2021
A highly stable reliable SRAM cell design for low power applications S Pal, S Bose, WH Ki, A Islam Microelectronics Reliability 105, 113503, 2020	55	2020
Transmission gate‐based 9T SRAM cell for variation resilient low power and reliable internet of things applications S Pal, V Gupta, WH Ki, A Islam IET Circuits, Devices & Systems 13 (5), 584-595, 2019	52	2019
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element S Pal, S Bose, WH Ki, A Islam IEEE Journal of the Electron Devices Society 7, 701-709, 2019	48	2019
A 2.5 GHz Low Power, High- , Reliable Design of Active Bandpass Filter V Kumar, R Mehra, A Islam IEEE Transactions on Device and Materials Reliability 17 (1), 229-244, 2017	44	2017
Circuit‐level design technique to mitigate impact of process, voltage and temperature variations in complementary metal‐oxide semiconductor full adder cells V Dokania, A Islam IET Circuits, Devices & Systems 9 (3), 204-212, 2015	44	2015
Optimization of SiC UMOSFET structure for improvement of breakdown voltage and ON-resistance D Bharti, A Islam IEEE Transactions on Electron Devices 65 (2), 615-621, 2017	42	2017
Variation resilient subthreshold SRAM cell design technique A Islam, M Hasan, T Arslan International Journal of Electronics 99 (9), 1223-1237, 2012	40	2012
Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands R Mehra, V Kumar, A Islam AEU-International Journal of Electronics and Communications 83, 1-10, 2018	37	2018
Soft-error-aware read-decoupled SRAM with multi-node recovery for aerospace applications S Pal, S Mohapatra, WH Ki, A Islam IEEE Transactions on Circuits and Systems II: Express Briefs 68 (10), 3336-3340, 2021	36	2021

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