| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 177 | 2021 |
| Hybrid 2D–CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature 618 (7963), 57-62, 2023 | 150 | 2023 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 86 | 2017 |
| Variability in resistive memories JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ... Advanced Intelligent Systems 5 (6), 2200338, 2023 | 85 | 2023 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 2014 | 76 | 2014 |
| An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 2013 | 75 | 2013 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 74 | 2019 |
| Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ... 2D Materials 4 (2), 025099, 2017 | 65 | 2017 |
| : a physical model for RRAM devices simulation MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza JOURNAL OF COMPUTATIONAL ELECTRONICS 16 (4), 1095-1120, 2017 | 63 | 2017 |
| Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature communications 15 (1), 1974, 2024 | 61 | 2024 |
| Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ... ACS applied materials & interfaces 9 (45), 39758-39770, 2017 | 61 | 2017 |
| Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices F Hui, MA Villena, W Fang, AY Lu, J Kong, Y Shi, X Jing, K Zhu, M Lanza 2D Materials 5 (3), 031011, 2018 | 59 | 2018 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 57 | 2015 |
| A SPICE compact model for unipolar RRAM reset process analysis F Jiménez-Molinos, MA Villena, JB Roldán, AM Roldán IEEE Transactions on Electron Devices 62 (3), 955-962, 2015 | 57 | 2015 |
| A comprehensive analysis on progressive reset transitions in RRAMs MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ... Journal of Physics D: applied physics 47 (20), 205102, 2014 | 44 | 2014 |
| 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ... Advanced Electronic Materials 6 (12), 1900115, 2020 | 41 | 2020 |
| Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach MM Al Chawa, R Picos, JB Roldan, F Jimenez‐Molinos, MA Villena, ... International Journal of Circuit Theory and Applications 46 (1), 29-38, 2018 | 38 | 2018 |
| Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets F Hui, W Fang, WS Leong, T Kpulun, H Wang, HY Yang, MA Villena, ... ACS applied materials & interfaces 9 (46), 39895-39900, 2017 | 38 | 2017 |
| A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs MA Villena, JB Roldán, MB González, P González-Rodelas, ... Solid-State Electronics 118, 56-60, 2016 | 37 | 2016 |
Mario LanzaIEEE Fellow | Associate Professor at National University of Singapore在 kaust.edu.sa 的電子郵件地址已通過驗證