適用於公開取用強制性政策的文章 - Ahmedullah Aziz瞭解詳情
在某個資料庫公開的文章：33
Nonvolatile memory design based on ferroelectric FETs
S George, K Ma, A Aziz, X Li, A Khan, S Salahuddin, MF Chang, S Datta, ...
Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016
授權規定： US National Science Foundation
Device-circuit analysis of ferroelectric FETs for low-power logic
S Gupta, M Steiner, A Aziz, V Narayanan, S Datta, SK Gupta
IEEE Transactions on Electron Devices 64 (8), 3092-3100, 2017
授權規定： US Department of Defense
Computing with ferroelectric FETs: Devices, models, systems, and applications
A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
授權規定： US National Science Foundation, US Department of Defense
Advancing nonvolatile computing with nonvolatile NCFET latches and flip-flops
X Li, S George, K Ma, WY Tsai, A Aziz, J Sampson, SK Gupta, MF Chang, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 64 (11), 2907-2919, 2017
授權規定： US National Science Foundation, US Department of Defense, National Natural …
Steep Switching Hybrid Phase Transition FETs (Hyper-FET) for Low Power Applications: A Device-Circuit Co-design Perspective—Part II
A Aziz, N Shukla, S Datta, SK Gupta
IEEE Transactions on Electron Devices 64 (3), 1358 - 1365, 2017
授權規定： US Department of Defense
Device circuit co design of FEFET based logic for low voltage processors
S George, A Aziz, X Li, MS Kim, S Datta, J Sampson, S Gupta, ...
2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 649-654, 2016
授權規定： US National Science Foundation
Lowering area overheads for FeFET-based energy-efficient nonvolatile flip-flops
X Li, S George, Y Liang, K Ma, K Ni, A Aziz, SK Gupta, J Sampson, ...
IEEE Transactions on Electron Devices 65 (6), 2670-2674, 2018
授權規定： US National Science Foundation, US Department of Defense, National Natural …
Symmetric 2-D-memory access to multidimensional data
S George, X Li, MJ Liao, K Ma, S Srinivasa, K Mohan, A Aziz, J Sampson, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (6 …, 2018
授權規定： US National Science Foundation, US Department of Defense
TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems
A Zeumault, S Alam, Z Wood, RJ Weiss, A Aziz, GS Rose
Frontiers in Nanotechnology 3 (734121), 2021
授權規定： US Department of Defense
Low power current sense amplifier based on phase transition material
A Aziz, X Li, N Shukla, S Datta, MF Chang, V Narayanan, SK Gupta
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
授權規定： US Department of Defense
A generalized workflow for creating machine learning-powered compact models for multi-state devices
J Hutchins, S Alam, A Zeumault, K Beckmann, N Cady, GS Rose, A Aziz
IEEE Access 10, 115513-115519, 2022
授權規定： US Department of Defense
A three-terminal non-volatile ferroelectric switch with an insulator–metal transition channel
J Vaidya, RSS Kanthi, S Alam, N Amin, A Aziz, N Shukla
Scientific Reports 12 (1), 2199, 2022
授權規定： US National Science Foundation
Cmos-compatible ising machines built using bistable latches coupled through ferroelectric transistor arrays
A Mallick, Z Zhao, MK Bashar, S Alam, MM Islam, Y Xiao, Y Xu, A Aziz, ...
Scientific reports 13 (1), 1515, 2023
授權規定： US National Science Foundation, US Department of Defense
Harnessing ferroelectrics for non-volatile memories and logic
SK Gupta, D Wang, S George, A Aziz, X Li, S Datta, V Narayanan
2017 18th International Symposium on Quality Electronic Design (ISQED), 29-34, 2017
授權規定： US National Science Foundation, US Department of Defense
SRAMs and DRAMs with separate read–write ports augmented by phase transition materials
Z Shen, S Srinivasa, A Aziz, S Datta, V Narayanan, SK Gupta
IEEE Transactions on Electron Devices 66 (2), 929-937, 2019
授權規定： US Department of Defense
Emerging steep-slope devices and circuits: Opportunities and challenges
X Li, MS Kim, S George, A Aziz, M Jerry, N Shukla, J Sampson, S Gupta, ...
Beyond-CMOS Technologies for Next Generation Computer Design, 195-230, 2019
授權規定： US National Science Foundation, US Department of Defense
Dynamically reconfigurable cryogenic spiking neuron based on superconducting memristor
MM Islam, S Alam, MS Hossain, A Aziz
2022 IEEE 22nd International Conference on Nanotechnology (NANO), 307-310, 2022
授權規定： US Department of Defense
A Cryogenic Artificial Synapse based on Superconducting Memristor
MM Islam, S Alam, MRI Udoy, MS Hossain, A Aziz
Proceedings of the Great Lakes Symposium on VLSI 2023, 143-148, 2023
授權規定： US Department of Defense
Variation-aware design space exploration of Mott memristor-based neuristors
S Alam, MM Islam, A Jaiswal, N Cady, G Rose, A Aziz
2022 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 68-73, 2022
授權規定： US Department of Defense
Cockcroft-Walton Multiplier based on UnipolarThreshold Switch
A Aziz, N Shukla, A Seabaugh, S Datta, S Gupta
2018 76th Device Research Conference (DRC), 1-2, 2018
授權規定： US Department of Defense
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