| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 850 | 2016 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 541 | 2017 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 519 | 2022 |
| Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012 | 501 | 2012 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 432 | 2016 |
| Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019 | 412 | 2019 |
| The past, the present, and the future of ferroelectric memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020 | 407 | 2020 |
| Next generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics 129 (10), 2021 | 349 | 2021 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 335 | 2012 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 333 | 2017 |
| Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors T Mikolajick, S Slesazeck, MH Park, U Schroeder Mrs Bulletin 43 (5), 340-346, 2018 | 327 | 2018 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 297 | 2016 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 271 | 2017 |
| Ferroelectric field-effect transistors based on HfO2: a review H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer, T Mikolajick, ... Nanotechnology 32 (50), 502002, 2021 | 262 | 2021 |
| Nanoscale resistive switching memory devices: a review S Slesazeck, T Mikolajick Nanotechnology 30 (35), 352003, 2019 | 225 | 2019 |
| Mimicking biological neurons with a nanoscale ferroelectric transistor H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck Nanoscale 10 (46), 21755-21763, 2018 | 221 | 2018 |
| Nonlinear dynamics of a locally-active memristor A Ascoli, S Slesazeck, H Mähne, R Tetzlaff, T Mikolajick IEEE Transactions on Circuits and Systems I: Regular Papers 62 (4), 1165-1174, 2015 | 201 | 2015 |
| Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors E Yurchuk, J Müller, J Paul, T Schlösser, D Martin, R Hoffmann, S Müeller, ... IEEE Transactions on Electron Devices 61 (11), 3699-3706, 2014 | 188 | 2014 |
| Physical model of threshold switching in NbO 2 based memristors S Slesazeck, H Mähne, H Wylezich, A Wachowiak, J Radhakrishnan, ... RSC advances 5 (124), 102318-102322, 2015 | 179 | 2015 |
| Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019 | 166 | 2019 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden在 namlab.com 的電子郵件地址已通過驗證
