| Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons JP Llinas, A Fairbrother, G Borin Barin, W Shi, K Lee, S Wu, B Yong Choi, ... Nature communications 8 (1), 633, 2017 | 407 | 2017 |
| Method of fabricating a semiconductor device having self-aligned floating gate and related device B Choi, C Lee, T Kim, D Park US Patent 7,329,580, 2008 | 304 | 2008 |
| A zeroing cell-to-cell interference page architecture with temporary LSB storing and parallel MSB program scheme for MLC NAND flash memories KT Park, M Kang, D Kim, SW Hwang, BY Choi, YT Lee, C Kim, K Kim IEEE Journal of Solid-State Circuits 43 (4), 919-928, 2008 | 215 | 2008 |
| Nonvolatile memory device having multi-bit storage and method of manufacturing the same B Choi, C Lee, D Park US Patent 7,511,358, 2009 | 49 | 2009 |
| Electrical characteristics of FinFET with vertically nonuniform source/drain doping profile DS Woo, JH Lee, WY Choi, BY Choi, YJ Choi, JD Lee, BG Park IEEE transactions on nanotechnology 1 (4), 233-237, 2002 | 42 | 2002 |
| Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers B Choi, C Lee, KC Park US Patent 7,883,929, 2011 | 31 | 2011 |
| Methods of reading data from non-volatile semiconductor memory device A Fayrushin, B Choi US Patent 7,760,550, 2010 | 31 | 2010 |
| Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories M Kang, KT Park, Y Song, S Hwang, BY Choi, Y Song, YT Lee, C Kim Japanese Journal of Applied Physics 48 (4S), 04C062, 2009 | 30 | 2009 |
| Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions S Kim, Y Park, W Kim, D Park, E Cho, S Sung, B Choi, T Kim, C Lee US Patent 7,419,859, 2008 | 30 | 2008 |
| 80nm self-aligned complementary I-MOS using double sidewall spacer and elevated drain structure and its applicability to amplifiers with high linearity WY Choi, JY Song, BY Choi, JD Lee, YJ Park, BG Park IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 30 | 2004 |
| Fully integrated SONOS flash memory cell array with BT (body tied)-FinFET structure SK Sung, TY Kim, ES Cho, HJ Cho, BY Choi, CW Oh, BK Cho, CH Lee, ... IEEE transactions on nanotechnology 5 (3), 174-179, 2006 | 28 | 2006 |
| Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same B Choi, T Kim, E Cho, S Sung, HJ Cho, D Park, C Lee US Patent 7,602,010, 2009 | 23 | 2009 |
| Side-gate design optimization of 50 nm MOSFETs with electrically induced source/drain WY Choi, BY Choi, DS Woo, YJ Choi, JD Lee, BG Park Japanese journal of applied physics 41 (4S), 2345, 2002 | 19 | 2002 |
| Trap layer engineered FinFET NAND flash with enhanced memory window Y Ahn, JD Choe, J Lee, D Choi, E Cho, B Choi, SH Lee, SK Sung, CH Lee, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 88-89, 2006 | 17 | 2006 |
| 30 nm self-aligned FinFET with large source/drain fan-out structure DS Woo, BY Choi, WY Choi, MW Lee, JD Lee, BG Park Electronics Letters 39 (15), 1, 2003 | 17 | 2003 |
| Split gate flash memory device having self-aligned control gate and method of manufacturing the same B Choi, CW Oh, D Park, D Kim, Y Lee US Patent 7,341,912, 2008 | 16 | 2008 |
| A new 50-nm nMOSFET with side-gates for virtual source-drain extensions YJ Choi, BY Choi, KR Kim, J duk Lee, BG Park IEEE Transactions on Electron Devices 49 (10), 1833-1835, 2002 | 16 | 2002 |
| Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same B Choi, CW Oh, D Park, D Kim US Patent 7,419,879, 2008 | 15 | 2008 |
| A new fabrication method for self-aligned nanoscale I-MOS (impact-ionization MOS) WY Choi, BY Choi, DS Woo, JD Lee, BG Park Conference Digest [Includes' Late News Papers' volume] Device Research …, 2004 | 15 | 2004 |
| Retention reliability of FINFET SONOS device JJ Lee, SH Lee, H Chae, BY Choi, SK Sung, SP Kim, ES Cho, CH Lee, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 530-533, 2006 | 12 | 2006 |