关注
Sungjoon Kim
Sungjoon Kim
其他姓名Sung-Joon Kim
Department of AI Semiconductor Engineering, Korea University, Sejong
在 korea.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Semiconductor light emitting device
SJ Kim, Y Ryu, T Park, TS Jang
US Patent US20140217448A1, 2014
882014
4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array
S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim
Advanced Intelligent Systems 4 (9), 2100273, 2022
502022
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim
Chaos, Solitons & Fractals 153, 111587, 2021
492021
Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
S Kim, TH Kim, H Kim, BG Park
Applied Physics Letters 117 (20), 2020
452020
Semiconductor light emitting device
SJ Kim, YH Ryu, MW Choi
US Patent US9786817B2, 2017
382017
3-bit multilevel operation with accurate programming scheme in tio x/al2o3 memristor crossbar array for quantized neuromorphic system
TH Kim, J Lee, S Kim, J Park, BG Park, H Kim
Nanotechnology 32 (29), 295201, 2021
342021
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors
J Park, TH Kim, S Kim, GH Lee, H Nili, H Kim
Chaos, Solitons & Fractals 152, 111388, 2021
252021
Effect of program error in memristive neural network with weight quantization
TH Kim, S Kim, K Hong, J Park, S Youn, JH Lee, BG Park, H Kim
IEEE Transactions on Electron Devices 69 (6), 3151-3157, 2022
242022
Synaptic Characteristics and Vector‐Matrix Multiplication Operation in Highly Uniform and Cost‐Effective Four‐Layer Vertical RRAM Array
J Kim, S Lee, S Kim, S Yang, JK Lee, TH Kim, M Ismail, C Mahata, Y Kim, ...
Advanced Functional Materials 34 (8), 2310193, 2024
182024
Intrinsic variation effect in memristive neural network with weight quantization
J Park, MS Song, S Youn, TH Kim, S Kim, K Hong, H Kim
Nanotechnology 33 (37), 375203, 2022
182022
Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization
J Park, S Kim, MS Song, S Youn, K Kim, TH Kim, H Kim
ACS applied materials & interfaces 16 (1), 1054-1065, 2024
142024
Effect of weight overlap region on neuromorphic system with memristive synaptic devices
GH Lee, TH Kim, MS Song, J Park, S Kim, K Hong, Y Kim, BG Park, H Kim
Chaos, Solitons & Fractals 157, 111999, 2022
142022
Demonstration of synaptic characteristics in VRRAM with TiN nanocrystals for neuromorphic system
S Yang, T Kim, S Kim, S Kim, TH Kim, M Ismail, C Mahata, S Kim, S Cho
Advanced Materials Interfaces 10 (21), 2300290, 2023
132023
Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor
D Ju, S Kim, K Park, J Lee, M Koo, S Kim
ACS Applied Materials & Interfaces 16 (19), 24929-24942, 2024
112024
Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation
S Youn, S Kim, TH Kim, J Park, H Kim
Advanced Intelligent Systems 5 (3), 2200325, 2023
112023
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
S Yang, T Kim, S Kim, D Chung, TH Kim, JK Lee, S Kim, M Ismail, ...
Nanoscale 15 (32), 13239-13251, 2023
102023
Stacked NbOx-based selector and ZrOx-based resistive memory for high-density crossbar array applications
Y Cho, J Heo, S Kim, S Kim
Surfaces and Interfaces 41, 103273, 2023
92023
Electric-field-induced metal filament formation in cobalt-based CBRAM observed by TEM
YJ Choi, S Bang, TH Kim, K Hong, S Kim, S Kim, BG Park, WY Choi
ACS Applied Electronic Materials 5 (3), 1834-1843, 2023
82023
InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation
S Kim, S Cho, J Jeong, S Kim, S Hwang, G Kim, S Yoon, BG Park
Optics Express 25 (6), 6440-6449, 2017
82017
Programmable threshold logic implementations in a memristor crossbar array
S Youn, J Lee, S Kim, J Park, K Kim, H Kim
Nano Letters 24 (12), 3581-3589, 2024
72024
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