| Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ... IEEE Transactions on Electron Devices 61 (3), 674-681, 2014 | 145 | 2014 |
| Synchronous non-volatile logic gate design based on resistive switching memories W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ... IEEE Transactions on Circuits and Systems 61 (2), 443-454, 2014 | 124 | 2014 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 113 | 2011 |
| Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang Applied Physics Letters 106 (23), 2015 | 107 | 2015 |
| Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories M Bocquet, D Deleruyelle, C Muller, JM Portal Applied Physics Letters 98 (26), 2011 | 75 | 2011 |
| Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ... Microelectronic Engineering 80, 210-213, 2005 | 69 | 2005 |
| Degradation of floating-gate memory reliability by few electron phenomena G Molas, D Deleruyelle, B De Salvo, G Ghibaudo, M GelyGely, L Perniola, ... IEEE Transactions on Electron Devices 53 (10), 2610-2619, 2006 | 62 | 2006 |
| Accurate analysis of parasitic current overshoot during forming operation in RRAMs S Tirano, L Perniola, J Buckley, J Cluzel, V Jousseaume, C Muller, ... Microelectronic engineering 88 (7), 1129-1132, 2011 | 58 | 2011 |
| Impact of few electron phenomena on floating-gate memory reliability G Molas, D Deleruyelle, B De Salvo, G Ghibaudo, M Gely, S Jacob, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 50 | 2004 |
| Compact modeling solutions for oxide-based resistive switching memories (OxRAM) M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ... Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014 | 49 | 2014 |
| Switching of nanosized filaments in NiO by conductive atomic force microscopy F Nardi, D Deleruyelle, S Spiga, C Muller, B Bouteille, D Ielmini Journal of Applied Physics 112 (6), 2012 | 48 | 2012 |
| Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ... 2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015 | 40 | 2015 |
| An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ... Journal of Elecronic Science and Technology 12 (2), 173-181, 2014 | 40 | 2014 |
| Low-power resistive switching in Au/NiO/Au nanowire arrays S Brivio, G Tallarida, D Perego, S Franz, D Deleruyelle, C Muller, S Spiga Applied Physics Letters 101 (22), 2012 | 33 | 2012 |
| Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate D Deleruyelle, M Putero, T Ouled-Khachroum, M Bocquet, MV Coulet, ... Solid-State Electronics 79, 159-165, 2013 | 32 | 2013 |
| Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ... Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014 | 29 | 2014 |
| Design and simulation of a 128 kb embedded nonvolatile memory based on a hybrid RRAM (HfO2)/28 nm FDSOI CMOS technology JM Portal, M Bocquet, S Onkaraiah, M Moreau, H Aziza, D Deleruyelle, ... IEEE Transactions on Nanotechnology 16 (4), 677-686, 2017 | 28 | 2017 |
| Direct observation at nanoscale of resistance switching in NiO layers by conductive-atomic force microscopy D Deleruyelle, C Dumas, M Carmona, C Muller, S Spiga, M Fanciulli Applied physics express 4 (5), 051101, 2011 | 25 | 2011 |
| Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories D Deleruyelle, C Muller, J Amouroux, R Müller Applied Physics Letters 96 (26), 2010 | 23 | 2010 |
| Machine learning surrogate model for acceleration of ferroelectric phase-field modeling K Alhada-Lahbabi, D Deleruyelle, B Gautier ACS Applied Electronic Materials 5 (7), 3894-3907, 2023 | 20 | 2023 |
Christophe J. MULLERFull Professor, Aix-Marseille University在 univ-amu.fr 的电子邮件经过验证