| X-ray diffraction of III-nitrides MA Moram, ME Vickers Reports on progress in physics 72 (3), 036502, 2009 | 1367 | 2009 |
| Piezoelectric coefficients and spontaneous polarization of ScAlN MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ... Journal of Physics: Condensed Matter 27 (24), 245901, 2015 | 358 | 2015 |
| Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013 | 236 | 2013 |
| Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 2009 | 178 | 2009 |
| On the origin of threading dislocations in GaN films MA Moram, CS Ghedia, DVS Rao, JS Barnard, Y Zhang, MJ Kappers, ... Journal of Applied Physics 106 (7), 2009 | 152 | 2009 |
| Elastic constants and critical thicknesses of ScGaN and ScAlN S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram Journal of applied physics 114 (24), 2013 | 141 | 2013 |
| ScGaN and ScAlN: emerging nitride materials MA Moram, S Zhang Journal of Materials Chemistry A 2 (17), 6042-6050, 2014 | 138 | 2014 |
| Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction MA Moram, ZH Barber, CJ Humphreys Journal of applied physics 102 (2), 2007 | 129 | 2007 |
| Dislocation reduction in gallium nitride films using scandium nitride interlayers MA Moram, Y Zhang, MJ Kappers, ZH Barber, CJ Humphreys Applied Physics Letters 91 (15), 2007 | 88 | 2007 |
| The effect of oxygen incorporation in sputtered scandium nitride films MA Moram, ZH Barber, CJ Humphreys Thin Solid Films 516 (23), 8569-8572, 2008 | 83 | 2008 |
| On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors M Råsander, MA Moram The Journal of Chemical Physics 143 (14), 2015 | 80 | 2015 |
| The effects of Si doping on dislocation movement and tensile stress in GaN films MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys Journal of Applied Physics 109 (7), 2011 | 75 | 2011 |
| Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire CF Johnston, MJ Kappers, MA Moram, JL Hollander, CJ Humphreys Journal of crystal growth 311 (12), 3295-3299, 2009 | 69 | 2009 |
| Electron effective mass and mobility limits in degenerate perovskite stannate CA Niedermeier, S Rhode, K Ide, H Hiramatsu, H Hosono, T Kamiya, ... Physical Review B 95 (16), 161202, 2017 | 67 | 2017 |
| Mg doping affects dislocation core structures in GaN SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ... Physical review letters 111 (2), 025502, 2013 | 66 | 2013 |
| Segregation of In to dislocations in InGaN MK Horton, S Rhode, SL Sahonta, MJ Kappers, SJ Haigh, TJ Pennycook, ... Nano letters 15 (2), 923-930, 2015 | 65 | 2015 |
| Defect reduction in (112¯ 2) semipolar GaN grown on m-plane sapphire using ScN interlayers CF Johnston, MA Moram, MJ Kappers, CJ Humphreys Applied Physics Letters 94 (16), 2009 | 65 | 2009 |
| Carbon nanotube (CNT) forest grown on diamond-like carbon (DLC) thin films significantly improves electrochemical sensitivity and selectivity towards dopamine S Sainio, T Palomäki, S Rhode, M Kauppila, O Pitkänen, T Selkälä, G Toth, ... Sensors and Actuators B: Chemical 211, 177-186, 2015 | 64 | 2015 |
| Band gap bowing in NixMg1−xO CA Niedermeier, M Råsander, S Rhode, V Kachkanov, B Zou, N Alford, ... Scientific reports 6 (1), 31230, 2016 | 62 | 2016 |
| Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon MA Moram, ZH Barber, CJ Humphreys, TB Joyce, PR Chalker Journal of applied physics 100 (2), 2006 | 60 | 2006 |
David HolecMontanuniversität Leoben, Austria在 unileoben.ac.at 的电子邮件经过验证
