| Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ... Semiconductor Science and Technology 29 (11), 113001, 2014 | 242 | 2014 |
| Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ... IEEE Transactions on Electron Devices 65 (1), 45-50, 2017 | 231 | 2017 |
| N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ... IEEE Electron Device Letters 38 (3), 359-362, 2017 | 127 | 2017 |
| W-band power performance of SiN-passivated N-polar GaN deep recess HEMTs B Romanczyk, X Zheng, M Guidry, H Li, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (3), 349-352, 2020 | 114 | 2020 |
| N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ... IEEE Electron Device Letters 39 (7), 1014-1017, 2018 | 96 | 2018 |
| 880 V/MIS Gate Trench CAVET on Bulk GaN Substrates D Ji, A Agarwal, H Li, W Li, S Keller, S Chowdhury IEEE Electron Device Letters 39 (6), 863-865, 2018 | 93 | 2018 |
| Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells K Hestroffer, F Wu, H Li, C Lund, S Keller, JS Speck, UK Mishra Semiconductor Science and Technology 30 (10), 105015, 2015 | 64 | 2015 |
| N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ... IEEE Electron Device Letters 37 (1), 77-80, 2015 | 51 | 2015 |
| N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ... IEEE Electron Device Letters 37 (6), 713-716, 2016 | 49 | 2016 |
| Development of polycrystalline diamond compatible with the latest N-polar GaN mm-wave technology M Malakoutian, C Ren, K Woo, H Li, S Chowdhury Crystal Growth & Design 21 (5), 2624-2632, 2021 | 39 | 2021 |
| Measurement of the hot electron mean free path and the momentum relaxation rate in GaN DJ Suntrup, G Gupta, H Li, S Keller, UK Mishra Applied Physics Letters 105 (26), 2014 | 37 | 2014 |
| W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ... 2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016 | 36 | 2016 |
| Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ... 2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016 | 33 | 2016 |
| Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices SH Chan, M Tahhan, X Liu, D Bisi, C Gupta, O Koksaldi, H Li, T Mates, ... Japanese Journal of Applied Physics 55 (2), 021501, 2016 | 33 | 2016 |
| Interfacial Vacancies in /(,)/ Heterostructures V Prozheeva, I Makkonen, H Li, S Keller, UK Mishra, F Tuomisto Physical Review Applied 13 (4), 044034, 2020 | 32 | 2020 |
| An improved methodology for extracting interface state density at Si3N4/GaN W Liu, I Sayed, C Gupta, H Li, S Keller, U Mishra Applied Physics Letters 116 (2), 2020 | 30 | 2020 |
| High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ... 2016 Lester Eastman Conference (LEC), 42-45, 2016 | 30 | 2016 |
| N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates E Ahmadi, F Wu, H Li, SW Kaun, M Tahhan, K Hestroffer, S Keller, ... Semiconductor Science and Technology 30 (5), 055012, 2015 | 30 | 2015 |
| High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017 | 29 | 2017 |
| Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness M Tahhan, J Nedy, SH Chan, C Lund, H Li, G Gupta, S Keller, U Mishra Journal of Vacuum Science & Technology A 34 (3), 2016 | 29 | 2016 |
Stacia KellerUniversity of California Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证