Jianlin Liu

引用次数

	总计	2019 年至今
引用	11145	2253
h 指数	53	25
i10 指数	166	59

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合著作者

Kang L. WangElectrical Engineering Department在 ee.ucla.edu 的电子邮件经过验证
Faxian XiuPhysics Department, Fudan University在 fudan.edu.cn 的电子邮件经过验证
Gang ChenProfessor, Mechanical Engineering, massachusetts institute of technology在 mit.edu 的电子邮件经过验证
Leelaprasanna Mandalapu JayaramuluSenior Staff Engineer - Product Development, Solaria Corporation在 solaria.com 的电子邮件经过验证
Alexander A. BalandinDistinguished Professor of Materials Science and Engineering, UCLA在 seas.ucla.edu 的电子邮件经过验证
Jingjian RenSanDisk, Corp., UC Riverside在 ucr.edu 的电子邮件经过验证
Zheng ZuoUniversity of California, Riverside在 ucr.edu 的电子邮件经过验证
Leonid ChernyakUCF在 ucf.edu 的电子邮件经过验证
Alexander KhitunUniversity of California Riverside在 engr.ucr.edu 的电子邮件经过验证
Hao TianUniversity of California, Riverside在 ucr.edu 的电子邮件经过验证
Jian-Guo ZhengDirector of Facilities, Irvine Materials Research Institute, University of California Irvine在 uci.edu 的电子邮件经过验证
Prof. Theodorian Borca-TasciucProfessor, Rensselaer Polytechnic Institute在 rpi.edu 的电子邮件经过验证
M. GoorskyUniversity of California, Los Angeles在 seas.ucla.edu 的电子邮件经过验证
Alireza KhanakiIntel Corporation在 intel.com 的电子邮件经过验证
Mildred S. DresselhausLate Professor, MIT在 mgm.mit.edu 的电子邮件经过验证
Renjing ZhengResearch assistant, UC Riverside在 ucr.edu 的电子邮件经过验证
Zhongguang XuMicron, UC Riverside, institute of microelectronics, CAS在 ucr.edu 的电子邮件经过验证
Muhammad MorshedPhD, Electrical Engineering, U C Riverside在 ucr.edu 的电子邮件经过验证
Wenhao ShiHuazhong University of Science and Technology在 hust.edu.cn 的电子邮件经过验证
Sunayna Binte BasharPhD, EE, UC RIverside在 intel.com 的电子邮件经过验证

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Jianlin Liu

Professor of Electrical and Computer Engineering, University of California, Riverside

在 ece.ucr.edu 的电子邮件经过验证 - 首页

Semiconductors Semiconductor materials and devices


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Electrically pumped waveguide lasing from ZnO nanowires S Chu, G Wang, W Zhou, Y Lin, L Chernyak, J Zhao, J Kong, L Li, J Ren, ... Nature nanotechnology 6 (8), 506-510, 2011	707	2011
Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals VA Fonoberov, KA Alim, AA Balandin, F Xiu, J Liu Physical Review B—Condensed Matter and Materials Physics 73 (16), 165317, 2006	509	2006
High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu, WP Beyermann Applied Physics Letters 87 (15), 2005	410	2005
Electrically pumped ultraviolet ZnO diode lasers on Si S Chu, M Olmedo, Z Yang, J Kong, J Liu Applied Physics Letters 93 (18), 2008	397	2008
Thermal conductivity of symmetrically strained Si/Ge superlattices T Borca-Tasciuc, W Liu, J Liu, T Zeng, DW Song, CD Moore, G Chen, ... Superlattices and microstructures 28 (3), 199-206, 2000	368	2000
Experimental proof-of-principle investigation of enhanced in (001) oriented Si/Ge superlattices T Koga, SB Cronin, MS Dresselhaus, JL Liu, KL Wang Applied physics letters 77 (10), 1490-1492, 2000	292	2000
Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, DT Zhao, JL Liu Applied Physics Letters 87 (25), 2005	252	2005
Ge/Si self-assembled quantum dots and their optoelectronic device applications KL Wang, D Cha, J Liu, C Chen Proceedings of the IEEE 95 (9), 1866-1883, 2007	239	2007
Measurements of anisotropic thermoelectric properties in superlattices B Yang, WL Liu, JL Liu, KL Wang, G Chen Applied Physics Letters 81 (19), 3588-3590, 2002	206	2002
Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates G Jin, JL Liu, SG Thomas, YH Luo, KL Wang, BY Nguyen Applied Physics Letters 75 (18), 2752-2754, 1999	196	1999
p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy FX Xiu, Z Yang, LJ Mandalapu, JL Liu, WP Beyermann Applied Physics Letters 88 (5), 2006	185	2006
Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice B Yang, JL Liu, KL Wang, G Chen Applied Physics Letters 80 (10), 1758-1760, 2002	183	2002
Sb-doped p-ZnO∕ Ga-doped n-ZnO homojunction ultraviolet light emitting diodes S Chu, JH Lim, LJ Mandalapu, Z Yang, L Li, JL Liu Applied Physics Letters 92 (15), 2008	176	2008
p-type behavior from Sb-doped ZnO heterojunction photodiodes LJ Mandalapu, FX Xiu, Z Yang, DT Zhao, JL Liu Applied Physics Letters 88 (11), 2006	166	2006
Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection LJ Mandalapu, Z Yang, FX Xiu, DT Zhao, JL Liu Applied physics letters 88 (9), 2006	165	2006
Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate S Tong, JL Liu, J Wan, KL Wang Applied physics letters 80 (7), 1189-1191, 2002	157	2002
Realization of Cu-doped p-type ZnO thin films by molecular beam epitaxy M Suja, SB Bashar, MM Morshed, J Liu ACS Applied materials & interfaces 7 (16), 8894-8899, 2015	149	2015
Na-Doped p-Type ZnO Microwires W Liu, F Xiu, K Sun, YH Xie, KL Wang, Y Wang, J Zou, Z Yang, J Liu Journal of the American Chemical Society 132 (8), 2498-2499, 2010	146	2010
Regimented placement of self-assembled Ge dots on selectively grown Si mesas G Jin, JL Liu, KL Wang Applied Physics Letters 76 (24), 3591-3593, 2000	145	2000
In-plane lattice thermal conductivity of a quantum-dot superlattice A Khitun, A Balandin, JL Liu, KL Wang Journal of Applied Physics 88 (2), 696-699, 2000	143	2000

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