受强制性开放获取政策约束的文章 - Xiaohua Ma了解详情
无法在其他位置公开访问的文章：289 篇
Electroless plating of highly efficient bifunctional boride‐based electrodes toward practical overall water splitting
W Hao, R Wu, R Zhang, Y Ha, Z Chen, L Wang, Y Yang, X Ma, D Sun, ...
Advanced Energy Materials 8 (26), 1801372, 2018
强制性开放获取政策： 国家自然科学基金委员会
NaCl-assisted one-step growth of MoS2–WS2 in-plane heterostructures
Z Wang, Y Xie, H Wang, R Wu, T Nan, Y Zhan, J Sun, T Jiang, Y Zhao, ...
Nanotechnology 28 (32), 325602, 2017
强制性开放获取政策： 国家自然科学基金委员会
Fabrication of practical catalytic electrodes using insulating and eco-friendly substrates for overall water splitting
W Hao, R Wu, H Huang, X Ou, L Wang, D Sun, X Ma, Y Guo
Energy & Environmental Science 13 (1), 102-110, 2020
强制性开放获取政策： 国家自然科学基金委员会
A skin-inspired artificial mechanoreceptor for tactile enhancement and integration
F Li, R Wang, C Song, M Zhao, H Ren, S Wang, K Liang, D Li, X Ma, ...
ACS nano 15 (10), 16422-16431, 2021
强制性开放获取政策： 中国科学院, 国家自然科学基金委员会
Electronic devices for human‐machine interfaces
H Wang, X Ma, Y Hao
Advanced Materials Interfaces 4 (4), 1600709, 2017
强制性开放获取政策： 国家自然科学基金委员会
A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors
B Dang, Q Wu, F Song, J Sun, M Yang, X Ma, H Wang, Y Hao
Nanoscale 10 (43), 20089-20095, 2018
强制性开放获取政策： 国家自然科学基金委员会
Ti3C2Tx MXene Nanoflakes Embedded with Copper Indium Selenide Nanoparticles for Desalination and Water Purification through High-Efficiency Solar-Driven …
Y Wang, J Nie, Z He, Y Zhi, X Ma, P Zhong
ACS Applied Materials & Interfaces 14 (4), 5876-5886, 2022
强制性开放获取政策： 国家自然科学基金委员会
Demonstration of normally-off recess-gated AlGaN/GaN MOSFET using GaN cap layer as recess mask
Z Xu, J Wang, J Liu, C Jin, Y Cai, Z Yang, M Wang, M Yu, B Xie, W Wu, ...
IEEE Electron Device Letters 35 (12), 1197-1199, 2014
强制性开放获取政策： 国家自然科学基金委员会
High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology
Y Lu, X Ma, L Yang, B Hou, M Mi, M Zhang, J Zheng, H Zhang, Y Hao
IEEE Electron Device Letters 39 (6), 811-814, 2018
强制性开放获取政策： 国家自然科学基金委员会
MXene/PEO aerogels with two-hierarchically porous architecture for electromagnetic wave absorption
X Zhou, S Li, M Zhang, X Yuan, J Wen, H Xi, H Wu, X Ma
Carbon 204, 538-546, 2023
强制性开放获取政策： 国家自然科学基金委员会
ZnO-based physically transient and bioresorbable memory on silk protein
F Song, H Wang, J Sun, H Gao, S Wu, M Yang, X Ma, Y Hao
IEEE Electron Device Letters 39 (1), 31-34, 2017
强制性开放获取政策： 国家自然科学基金委员会
Performance of Surface‐Oxidized Ni3B, Ni2B, and NiB2 Electrocatalysts for Overall Water Splitting
W Yuan, X Zhao, W Hao, J Li, L Wang, X Ma, Y Guo
ChemElectroChem 6 (3), 764-770, 2019
强制性开放获取政策： 国家自然科学基金委员会
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity
H Lu, B Hou, L Yang, X Niu, Z Si, M Zhang, M Wu, M Mi, Q Zhu, K Cheng, ...
IEEE Transactions on Electron Devices 68 (7), 3308-3313, 2021
强制性开放获取政策： 国家自然科学基金委员会
Morphology-controllable polycrystalline TiO2 nanorod arrays for efficient charge collection in dye-sensitized solar cells
P Zhong, X Ma, X Chen, R Zhong, X Liu, D Ma, M Zhang, Z Li
Nano Energy 16, 99-111, 2015
强制性开放获取政策： 国家自然科学基金委员会
Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator
Y Zhao, C Wang, X Zheng, X Ma, Y He, K Liu, A Li, Y Peng, C Zhang, ...
Solid-State Electronics 163, 107649, 2020
强制性开放获取政策： 国家自然科学基金委员会
Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance
J Zhu, L Chen, J Jiang, X Lu, L Yang, B Hou, M Liao, Y Zhou, X Ma, Y Hao
IEEE Electron Device Letters 39 (1), 79-82, 2017
强制性开放获取政策： 国家自然科学基金委员会
Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region
M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ...
IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017
强制性开放获取政策： 国家自然科学基金委员会
Analysis of the breakdown characterization method in GaN-based HEMTs
SL Zhao, B Hou, WW Chen, MH Mi, JX Zheng, JC Zhang, XH Ma, Y Hao
IEEE Transactions on power electronics 31 (2), 1517-1527, 2015
强制性开放获取政策： 国家自然科学基金委员会
The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing
YH Hong, XF Zheng, YL He, F Zhang, XY Zhang, XC Wang, JN Li, ...
Applied Physics Letters 119 (13), 2021
强制性开放获取政策： 国家自然科学基金委员会
Effect of nitrogen-accommodation ability of electrodes in SiNx-based resistive switching devices
M Yang, H Wang, X Ma, H Gao, B Wang
Applied Physics Letters 111 (23), 2017
强制性开放获取政策： 中国科学院, 国家自然科学基金委员会
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