受强制性开放获取政策约束的文章 - Jian Sun了解详情
无法在其他位置公开访问的文章：25 篇
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance
X Liu, D Qu, Y Yuan, J Sun, WJ Yoo
ACS applied materials & interfaces 12 (23), 26586-26592, 2020
强制性开放获取政策： 国家自然科学基金委员会
Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures
Z Wang, X Liu, X Zhou, Y Yuan, K Zhou, D Zhang, H Luo, J Sun
Advanced Materials, 2200032, 2022
强制性开放获取政策： 国家自然科学基金委员会
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
X Liu, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun
Applied Physics Letters 118 (23), 233101, 2021
强制性开放获取政策： 国家自然科学基金委员会
Controllable Oxidation of ZrS2 to Prepare High‐κ, Single‐Crystal m‐ZrO2 for 2D Electronics
Y Jin, J Sun, L Zhang, J Yang, Y Wu, B You, X Liu, K Leng, S Liu
Advanced Materials 35 (18), 2212079, 2023
强制性开放获取政策： 国家自然科学基金委员会
Ambipolar MoS2 Field Effect Transistor by Spatially Controlled Chemical Doping
X Liu, Y Yuan, D Qu, J Sun
physica status solidi (RRL)–Rapid Research Letters, 2019
强制性开放获取政策： 国家自然科学基金委员会
Tunable large-area phase reversion in chemical vapor deposited few-layer MoTe 2 films
X Zhu, A Li, D Wu, P Zhu, H Xiang, S Liu, J Sun, F Ouyang, Y Zhou, ...
Journal of Materials Chemistry C 7 (34), 10598-10604, 2019
强制性开放获取政策： 中国科学院, 国家自然科学基金委员会
Directly Probing Effective-Mass Anisotropy of Two-Dimensional in Schottky Tunnel Transistors
X Liu, Y Yuan, Z Wang, RS Deacon, WJ Yoo, J Sun, K Ishibashi
Physical Review Applied 13 (4), 044056, 2020
强制性开放获取政策： 国家自然科学基金委员会
Biomimetic Artificial Tetrachromatic Photoreceptors Based on Fully Light‐Controlled 2D Transistors
R Wu, X Liu, Y Yuan, Z Wang, Y Jing, J Sun
Advanced Functional Materials 33 (46), 2305677, 2023
强制性开放获取政策： 国家自然科学基金委员会
Oxidations of two-dimensional semiconductors: Fundamentals and applications
J Yang, X Liu, Q Dong, Y Shen, Y Pan, Z Wang, K Tang, X Dai, R Wu, ...
Chinese Chemical Letters 33 (1), 177-185, 2022
强制性开放获取政策： 国家自然科学基金委员会
Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures
Y Pan, X Liu, J Yang, WJ Yoo, J Sun
ACS Applied Materials & Interfaces 13 (45), 54294-54300, 2021
强制性开放获取政策： 国家自然科学基金委员会
Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures
G Shao, XX Xue, M Yang, J Yang, X Liu, H Lu, Y Jiang, Y Jin, Q Yuan, ...
Chemistry of Materials 33 (11), 4231-4239, 2021
强制性开放获取政策： 国家自然科学基金委员会
A Light‐Programmed Rewritable Lattice‐Mediated Multistate Memory for High‐Density Data Storage
Q Sun, M Yuan, R Wu, Y Miao, Y Yuan, Y Jing, Y Qu, X Liu, J Sun
Advanced Materials 35 (32), 2302318, 2023
强制性开放获取政策： 国家自然科学基金委员会
Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors
X Liu, C Zhang, E Li, C Gao, R Wang, Y Liu, F Liu, W Shi, Y Yuan, J Sun, ...
Advanced Functional Materials, 2309642, 2023
强制性开放获取政策： 国家自然科学基金委员会
Double quantum dot-like transport in controllably doped graphene nanoribbon
Z Wang, Y Yuan, X Liu, M Muruganathan, H Mizuta, J Sun
Applied Physics Letters 118 (8), 083105, 2021
强制性开放获取政策： 国家自然科学基金委员会
Chemical vapor deposition synthesis and Raman scattering investigation of quasi-one-dimensional ZrS3 nanoflakes
Y Chen, Y Jin, J Yang, Y Ren, Z Duan, X Liu, J Sun, S Liu, X Zhu, X Duan
Nano Research 16 (7), 10567-10572, 2023
强制性开放获取政策： 国家自然科学基金委员会
Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors
Q Sun, X Zhou, X Liu, Y Yuan, L Sun, D Wang, F Xue, H Luo, D Zhang, ...
Nano Letters 24 (3), 975-982, 2024
强制性开放获取政策： 国家自然科学基金委员会
Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry Transistors
Z Wang, X Liu, H Lei, Y Lu, Y Yuan, Y Qu, Y Huang, H Mizuta, WJ Yoo, ...
Physical Review Applied 17 (4), 044017, 2022
强制性开放获取政策： 国家自然科学基金委员会
Filamentary superconductivity in wrinkled PtSe2
Y Yuan, Y Duan, Z Wang, J Sun
Journal of Physics D: Applied Physics 54 (21), 215302, 2021
强制性开放获取政策： 国家自然科学基金委员会
Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics
Y Jing, X Dai, J Yang, X Zhang, Z Wang, X Liu, H Li, Y Yuan, X Zhou, ...
Nano Letters 24 (13), 3937-3944, 2024
强制性开放获取政策： 国家自然科学基金委员会
Interlayer Coupling in Anisotropic/Isotropic Van der Waals Heterostructures of ReS2 and WS2
B You, Z Xu, J Yang, X Jiang, Y Li, G Shao, Y Jin, H Xiang, H Jiang, X Liu, ...
Small 20 (3), 2304010, 2024
强制性开放获取政策： 国家自然科学基金委员会
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