| Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton Physical Review B 57 (3), 1505, 1998 | 14078 | 1998 |
| Solid-state lighting CJ Humphreys MRS bulletin 33 (4), 459-470, 2008 | 492 | 2008 |
| Machine learning predicts laboratory earthquakes B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ... Geophysical Research Letters 44 (18), 9276-9282, 2017 | 444 | 2017 |
| Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013 | 396 | 2013 |
| Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003 | 343 | 2003 |
| The scattering of fast electrons by crystals CJ Humphreys Reports on Progress in Physics 42 (11), 1825, 1979 | 315 | 1979 |
| Absorption parameters in electron diffraction theory PBH CJ Humphreys Philosophical Magazine 18, 115-122, 1968 | 289 | 1968 |
| Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005 | 270 | 2005 |
| Critical thickness calculations for InGaN/GaN D Holec, P Costa, MJ Kappers, CJ Humphreys Journal of Crystal Growth 303 (1), 314-317, 2007 | 269 | 2007 |
| Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002 | 252 | 2002 |
| Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013 | 236 | 2013 |
| Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies Journal of Applied Physics 89 (6), 3143-3150, 2001 | 225 | 2001 |
| Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011 | 218 | 2011 |
| Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007 | 207 | 2007 |
| Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989 | 199 | 1989 |
| Chemical mapping and formation of V-defects in InGaN multiple quantum wells N Sharma, P Thomas, D Tricker, C Humphreys Applied Physics Letters 77 (9), 1274-1276, 2000 | 179 | 2000 |
| Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 2009 | 178 | 2009 |
| InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003 | 178 | 2003 |
| Dopant profiling with the scanning electron microscope—A study of Si SL Elliott, RF Broom, CJ Humphreys Journal of applied physics 91 (11), 9116-9122, 2002 | 177 | 2002 |
| A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons CJHPBH JP Spencer Philosophical Magazine 26, 193-213, 1972 | 166 | 1972 |
Rachel OliverProfessor of Materials Science, Cambridge University在 cam.ac.uk 的电子邮件经过验证