| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 103 | 2023 |
| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature communications 12 (1), 5727, 2021 | 63 | 2021 |
| Negative differential capacitance in ultrathin ferroelectric hafnia S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics 6 (5), 390-397, 2023 | 32 | 2023 |
| 2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate HJ Lee, T Moon, CH An, CS Hwang Advanced Electronic Materials 5 (1), 1800527, 2019 | 26 | 2019 |
| In operando optical tracking of oxygen vacancy migration and phase change in few nanometers ferroelectric HZO memories A Jan, T Rembert, S Taper, J Symonowicz, N Strkalj, T Moon, YS Lee, ... Advanced Functional Materials 33 (22), 2214970, 2023 | 21 | 2023 |
| Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor HJ Lee, T Moon, SD Hyun, S Kang, CS Hwang Advanced Electronic Materials 7 (1), 2000876, 2021 | 13 | 2021 |
| Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface T Moon, HJ Lee, SD Hyun, BS Kim, HH Kim, CS Hwang Advanced Electronic Materials 6 (6), 1901286, 2020 | 12 | 2020 |
| An analytical interpretation of the memory window in ferroelectric field-effect transistors S Yoo, DH Choe, HJ Lee, S Jo, YS Lee, Y Park, KH Kim, D Kim, SG Nam Applied Physics Letters 123 (22), 2023 | 10 | 2023 |
| Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films HJ Lee, T Moon, S Kang, W Kim, CS Hwang ACS Applied Electronic Materials 3 (7), 3247-3255, 2021 | 10 | 2021 |
| Diode Property and Positive Temperature Coefficient of Resistance of Pt/Al2O3/Nb:SrTiO3 T Moon, HJ Lee, KD Kim, YH Lee, SD Hyun, HW Park, YB Lee, BS Kim, ... Advanced Electronic Materials 4 (12), 1800388, 2018 | 7 | 2018 |
| Laminated Ferroelectric FET With Large Memory Window and High Reliability HJ Lee, S Nam, Y Lee, K Kim, DH Choe, S Yoo, Y Park, S Jo, D Kim, ... IEEE Transactions on Electron Devices, 2024 | 4 | 2024 |
| Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing T Moon, HJ Lee, S Nam, H Bae, DH Choe, S Jo, YS Lee, Y Park, JJ Yang, ... Neuromorphic Computing and Engineering 3 (2), 024001, 2023 | 4 | 2023 |
| Fabrication of a nano-scaled tri-gate field effect transistor using the step-down patterning and dummy gate processes JH Lee, DG Kim, HJ Lee, CS Hwang Microelectronic Engineering 173, 33-41, 2017 | 2 | 2017 |
| A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND I Myeong, S Lim, T Kim, S Park, S Noh, SM Lee, J Woo, H Ko, Y Noh, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 9B. 3-1-9B. 3-6, 2024 | 1 | 2024 |
| Surface-functionalized Hafnia with bespoke ferroelectric properties for memory and logic applications DH Choe, H Bae, H Lee, Y Lee, T Moon, SG Nam, S Jo, HJ Lee, E Lee, ... 2021 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2021 | 1 | 2021 |
| Memory device implementing multi-bit and memory apparatus including the same D CHOE, J HEO, H Lee, S NAM, Y PARK, S YOO US Patent US20240260274A1, 2024 | | 2024 |
| Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering A Jan, SA Fraser, T Moon, YS Lee, H Bae, HJ Lee, DH Choe, MT Becker, ... Small Science, 2400223, 2024 | | 2024 |
| Semiconductor device including ferroelectric layer H Lee, J HEO, S NAM, Y LEE, D CHOE US Patent US20240244848A1, 2024 | | 2024 |
| Highly Enhanced Memory Window of 17.8 V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer S Yoo, D Kim, DH Choe, HJ Lee, Y Lee, S Jo, Y Park, KH Kim, K Jung, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | | 2024 |
| Electronic device including ferroelectric thin film, method of manufacturing the electronic device, and electronic apparatus including the electronic device Y LEE, J HEO, K Kim, D CHOE, H Lee, S JO US Patent US20240196623A1, 2024 | | 2024 |