| Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-doped DV Lang, RA Logan, M Jaros Physical Review B 19 (2), 1015, 1979 | 1175 | 1979 |
| Electronic structure of InAs/GaAs self-assembled quantum dots MA Cusack, PR Briddon, M Jaros Physical Review B 54 (4), R2300, 1996 | 512 | 1996 |
| Complex nature of gold-related deep levels in silicon DV Lang, HG Grimmeiss, E Meijer, M Jaros Physical review B 22 (8), 3917, 1980 | 314 | 1980 |
| Deep levels in semiconductors M Jaros (No Title), 1982 | 247 | 1982 |
| Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets DJ Wolford, TF Kuech, JA Bradley, MA Gell, D Ninno, M Jaros Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 235 | 1986 |
| Physics and applications of semiconductor microstructures M Jaros (No Title), 1989 | 221 | 1989 |
| Electronic properties of semiconductor alloy systems M Jaros Reports on Progress in Physics 48 (8), 1091, 1985 | 218 | 1985 |
| Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric field EJ Austin, M Jaros Physical Review B 31 (8), 5569, 1985 | 203 | 1985 |
| Ultrathin SimGen strained layer superlattices-a step towards Si optoelectronics H Presting, H Kibbel, M Jaros, RM Turton, U Menczigar, G Abstreiter, ... Semiconductor science and technology 7 (9), 1127, 1992 | 178 | 1992 |
| Localized defects in III-V semiconductors M Jaros, S Brand Physical Review B 14 (10), 4494, 1976 | 164 | 1976 |
| Absorption spectra and optical transitions in InAs/GaAs self-assembled quantum dots MA Cusack, PR Briddon, M Jaros Physical Review B 56 (7), 4047, 1997 | 163 | 1997 |
| Wave functions and optical cross sections associated with deep centers in semiconductors M Jaros Physical Review B 16 (8), 3694, 1977 | 160 | 1977 |
| Deep levels in semiconductors, Adv M Jaros Phys 29, 409-525, 1980 | 140 | 1980 |
| Simple analytic model for heterojunction band offsets M Jaros Physical Review B 37 (12), 7112, 1988 | 137 | 1988 |
| Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-As (001) superlattices MA Gell, D Ninno, M Jaros, DC Herbert Physical Review B 34 (4), 2416, 1986 | 123 | 1986 |
| Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-As superlattices and multiple-quantum-well structures MA Gell, D Ninno, M Jaros, DJ Wolford, TF Keuch, JA Bradley Physical Review B 35 (3), 1196, 1987 | 117 | 1987 |
| Electronic structure and optical properties of Si-Ge superlattices KB Wong, M Jaros, I Morrison, JP Hagon Physical review letters 60 (21), 2221, 1988 | 106 | 1988 |
| Electronic structure of GaAs-As quantum well and sawtooth superlattices M Jaros, KB Wong, MA Gell Physical Review B 31 (2), 1205, 1985 | 106 | 1985 |
| Study of the main electron trap in alloys A Mircea, A Mitonneau, J Hallais, M Jaros Physical Review B 16 (8), 3665, 1977 | 100 | 1977 |
| Two-electron impurity states in GaP: O M Jaros Journal of Physics C: Solid State Physics 8 (15), 2455, 1975 | 82 | 1975 |