| Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression XG He, DG Zhao, DS Jiang Chinese physics B 24 (6), 067301, 2015 | 134 | 2015 |
| Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, LC Le, XJ Li, XG He, JP Liu, ... Journal of Applied Physics 115 (16), 2014 | 58 | 2014 |
| Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes LC Le, DG Zhao, DS Jiang, P Chen, ZS Liu, J Yang, XG He, XJ Li, JP Liu, ... Optics Express 22 (10), 11392-11398, 2014 | 35 | 2014 |
| GaN high electron mobility transistors with AlInN back barriers XG He, DG Zhao, DS Jiang, JJ Zhu, P Chen, ZS Liu, LC Le, J Yang, XJ Li, ... Journal of Alloys and Compounds 662, 16-19, 2016 | 32 | 2016 |
| Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XJ Li, XG He, ... Journal of Applied Physics 117 (5), 2015 | 31 | 2015 |
| Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition XG He, DG Zhao, DS Jiang, ZS Liu, P Chen, LC Le, J Yang, XJ Li, ... Thin Solid Films 564, 135-139, 2014 | 26 | 2014 |
| Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness LC Le, DG Zhao, DS Jiang, L Li, LL Wu, P Chen, ZS Liu, J Yang, XJ Li, ... Journal of Applied Physics 114 (14), 2013 | 26 | 2013 |
| Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, XJ Li, XG He, JP Liu, ... Optics Express 24 (13), 13824-13831, 2016 | 23 | 2016 |
| Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers J Yang, DG Zhao, DS Jiang, P Chen, JJ Zhu, ZS Liu, LC Le, XG He, XJ Li, ... Journal of Alloys and Compounds 635, 82-86, 2015 | 21 | 2015 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells X Li, DG Zhao, J Yang, DS Jiang, ZS Liu, P Chen, JJ Zhu, W Liu, XG He, ... Superlattices and Microstructures 97, 186-192, 2016 | 18 | 2016 |
| The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content X Li, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, J Yang, W Liu, XG He, ... physica status solidi (a) 213 (8), 2223-2228, 2016 | 15 | 2016 |
| Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition X He, D Zhao, D Jiang, J Zhu, P Chen, Z Liu, L Le, J Yang, X Li, S Zhang, ... Journal of Vacuum Science & Technology B 32 (5), 2014 | 15 | 2014 |
| Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, JJ Zhu, LC Le, XJ Li, XG He, ... Chinese Physics B 25 (2), 027102, 2016 | 14 | 2016 |
| The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN XJ Li, DG Zhao, DS Jiang, ZS Liu, P Chen, JJ Zhu, LC Le, J Yang, XG He, ... Journal of Applied Physics 116 (16), 2014 | 14 | 2014 |
| Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes L Le, D Zhao, D Jiang, P Chen, Z Liu, J Zhu, J Yang, X Li, X He, J Liu, ... Journal of Vacuum Science & Technology B 33 (1), 2015 | 13 | 2015 |
| Performance comparison of front-and back-illuminated modes of the AlGaN-based pin solar-blind ultraviolet photodetectors X Li, D Zhao, D Jiang, Z Liu, P Chen, L Le, J Yang, X He, S Zhang, J Zhu, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 12 | 2014 |
| Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films J Yang, D Zhao, D Jiang, P Chen, J Zhu, Z Liu, L Le, X He, X Li, YT Zhang, ... Journal of Vacuum Science & Technology A 33 (2), 2015 | 11 | 2015 |
| Differential resistance of GaN-based laser diodes with and without polarization effect X Li, ZS Liu, DG Zhao, DS Jiang, P Chen, JJ Zhu, J Yang, LC Le, W Liu, ... Applied optics 54 (29), 8706-8711, 2015 | 9 | 2015 |
| Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells J Yang, DG Zhao, DS Jiang, P Chen, ZS Liu, LC Le, XG He, XJ Li, H Yang physica status solidi (a) 211 (9), 2157-2160, 2014 | 9 | 2014 |
| Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells J Yang, DG Zhao, DS Jiang, ZS Liu, P Chen, L Li, LL Wu, LC Le, XJ Li, ... Chinese Physics B 23 (6), 068801, 2014 | 9 | 2014 |
