| MOCVD growth of high efficiency current-matched AlGaAsSi tandem solar cell T Soga, K Baskar, T Kato, T Jimbo, M Umeno Journal of crystal growth 174 (1-4), 579-584, 1997 | 84 | 1997 |
| Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition T Premkumar, YS Zhou, YF Lu, K Baskar ACS applied materials & interfaces 2 (10), 2863-2869, 2010 | 83 | 2010 |
| Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa physica status solidi (a) 202 (2), R16-R18, 2005 | 71 | 2005 |
| Synthesis, structural, morphological and electrical properties of NBT–BT ceramics for piezoelectric applications SR Kanuru, K Baskar, R Dhanasekaran Ceramics International 42 (5), 6054-6064, 2016 | 68 | 2016 |
| Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy M Balaji, A Claudel, V Fellmann, I Gelard, E Blanquet, R Boichot, A Pierret, ... Journal of Alloys and Compounds 526, 103-109, 2012 | 49 | 2012 |
| Growth and comparison of single crystals and polycrystalline brownmillerite Ca2Fe2O5 S Dhankhar, G Bhalerao, S Ganesamoorthy, K Baskar, S Singh Journal of Crystal Growth 468, 311-315, 2017 | 45 | 2017 |
| Heteroepitaxial technologies on Si for high-efficiency solar cells M Umeno, T Soga, K Baskar, T Jimbo Solar energy materials and solar cells 50 (1-4), 203-212, 1998 | 44 | 1998 |
| 2 MeV ion irradiation effects on AlGaN/GaN HFET devices G Sonia, E Richter, F Brunner, A Denker, R Lossy, M Mai, F Lenk, ... Solid-state electronics 52 (7), 1011-1017, 2008 | 39 | 2008 |
| Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy A Claudel, V Fellmann, I Gélard, N Coudurier, D Sauvage, M Balaji, ... Thin Solid Films 573, 140-147, 2014 | 33 | 2014 |
| Anomalous room temperature magnetoresistance in brownmillerite Ca 2 Fe 2 O 5 S Dhankhar, K Gupta, G Bhalerao, N Shukla, M Chandran, B Francis, ... RSC Advances 5 (112), 92549-92553, 2015 | 32 | 2015 |
| Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2 and CuInTe2 nanocubes and their characterization S Sugan, K Baskar, R Dhanasekaran Current Applied Physics 14 (11), 1416-1420, 2014 | 31 | 2014 |
| Growth and characterization of tris thiourea magnesium zinc sulphate single crystals N Bhuvaneswari, K Baskar, R Dhanasekaran Optik 126 (23), 3731-3736, 2015 | 30 | 2015 |
| Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator K Balachander, S Arulkumaran, T Egawa, Y Sano, K Baskar Materials Science and Engineering: B 119 (1), 36-40, 2005 | 30 | 2005 |
| Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth YT Sun, K Baskar, S Lourdudoss Journal of applied physics 94 (4), 2746-2748, 2003 | 30 | 2003 |
| Structural and optical characterization of AlGaN/GaN layers M Jayasakthi, R Ramesh, P Arivazhagan, R Loganathan, K Prabakaran, ... Journal of crystal growth 401, 527-531, 2014 | 29 | 2014 |
| Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition S Sanjay, K Baskar Applied Surface Science 456, 526-531, 2018 | 27 | 2018 |
| Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition T Premkumar, P Manoravi, BK Panigrahi, K Baskar Applied surface science 255 (15), 6819-6822, 2009 | 27 | 2009 |
| Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition K Prabakaran, R Ramesh, P Arivazhagan, M Jayasakthi, S Sanjay, ... Journal of Alloys and Compounds 811, 151803, 2019 | 26 | 2019 |
| Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex V Ganesh, S Suresh, M Balaji, K Baskar Journal of Alloys and Compounds 498 (1), 52-56, 2010 | 26 | 2010 |
| Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulators K Balachander, S Arulkumaran, Y Sano, T Egawa, K Baskar physica status solidi (a) 202 (4), R32-R34, 2005 | 26 | 2005 |
Dr.Raju RameshAalto University, Finland在 aalto.fi 的电子邮件经过验证