| Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current HL Ko, QH Luc, P Huang, SM Chen, JY Wu, CW Hsu, NA Tran, EY Chang IEEE Transactions on Electron Devices 69 (2), 495-499, 2021 | 11 | 2021 |
| Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes HL Ko, QH Luc, P Huang, SM Chen, JY Wu, NA Tran, EY Chang IEEE Transactions on Electron Devices 69 (8), 4183-4187, 2022 | 9 | 2022 |
| GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation SM Chen, SL Tsai, K Mizutani, T Hoshii, H Wakabayashi, K Tsutsui, ... Japanese Journal of Applied Physics 61 (SH), SH1007, 2022 | 9 | 2022 |
| Sub-10 nm top width nanowire InGaAs gate-all-around MOSFETs with improved subthreshold characteristics and device reliability HL Ko, QH Luc, P Huang, JY Wu, SM Chen, NA Tran, HT Hsu, EY Chang IEEE Journal of the Electron Devices Society 10, 188-191, 2022 | 9 | 2022 |
| Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement SM Chen, T Hoshii, H Wakabayashi, K Tsutsui, EY Chang, K Kakushima Japanese Journal of Applied Physics 63 (3), 03SP45, 2024 | 3 | 2024 |
| Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications SM Chen, H Nishida, T Hoshii, K Tsutsui, H Wakabayashi, EY Chang, ... 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 29-30, 2024 | 1 | 2024 |
| Oxygen-atom Incorporated Ferroelectric AIScN Capacitors for Multi-level Operation SM Chen, H Nishida, SL Tsai, T Hoshii, K Tsutsui, H Wakabayashi, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Electrical Characteristics of InGaAs Gate-All-Around Nanowire MOSFETs Utilizing In-Situ ALD Grown HfO2/TiN Gate Stack SM Chen PQDT-Global, 2023 | | 2023 |
| Effectively Suppressed Short Channel Effects Use Nitrogen-Passivated of Ingaas Gate-All-Around Mosfets for High Switching Speed Logic Application L Ko, QH Luc, SM Chen, P Huang, JY Wu, CW Hsu, NA Tran, EY Chang Electrochemical Society Meeting Abstracts prime2020, 3836-3836, 2020 | | 2020 |
