| Gate current degradation mechanisms of GaN high electron mobility transistors J Joh, L Xia, JA del Alamo 2007 IEEE International Electron Devices Meeting, 385-388, 2007 | 129 | 2007 |
| On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate L Xia, A Hanson, T Boles, D Jin Applied Physics Letters 102, 113510, 2013 | 56 | 2013 |
| 3D nanohelix fabrication and 3D nanometer assembly by focused ion beam stress-introducing technique L Xia, W Wu, J Xu, Y Hao, Y Wang 19th IEEE International Conference on Micro Electro Mechanical Systems, 118-121, 2006 | 43 | 2006 |
| Field-plate structures for semiconductor devices L Xia, M Azize, B Lu US Patent 9,911,817, 2018 | 38 | 2018 |
| Hole mobility enhancement in In0. 41Ga0. 59Sb quantum-well field-effect transistors L Xia, JB Boos, BR Bennett, MG Ancona, JA del Alamo Applied Physics Letters 98 (5), 2011 | 37 | 2011 |
| Semiconductor structure with a spacer layer M Azize, B Lu, L Xia US Patent 9,536,984, 2017 | 26 | 2017 |
| III-Nitride semiconductors with recess regions and methods of manufacture B Lu, L Xia US Patent 9,614,069, 2017 | 20 | 2017 |
| Electric field management for a group III-nitride semiconductor device B Lu, T Palacios, L Xia, M Azize US Patent 9,455,342, 2016 | 20 | 2016 |
| Characterization of focused-ion-beam-induced damage in n-type silicon using Schottky contact L Xia, W Wu, Y Hao, Y Wang, J Xu Applied physics letters 88, 152108, 2006 | 14 | 2006 |
| Semiconductor structure and etch technique for monolithic integration of III-N transistors L Xia, M Azize, B Lu US Patent 9,502,535, 2016 | 13 | 2016 |
| High Voltage GaN-on-Silicon HEMT’s T Boles, C Varmazis, D Carlson, L Xia, D Jin, T Palacios, GW Turner, ... CSMANTECH, May, 2013 | 13 | 2013 |
| Impact of⟨ 110⟩ uniaxial strain on n-channel In0. 15Ga0. 85As high electron mobility transistors L Xia, JA del Alamo Applied Physics Letters 95 (24), 2009 | 13 | 2009 |
| Transistor structure having buried island regions B Lu, T Palacios, L Xia, M Azize US Patent 10,566,192, 2020 | 12 | 2020 |
| Advanced power electronic devices based on gallium nitride (GaN) D Piedra, B Lu, M Sun, Y Zhang, E Matioli, F Gao, JW Chung, O Saadat, ... 2015 IEEE International Electron Devices Meeting (IEDM), 16.6. 1-16.6. 4, 2015 | 9 | 2015 |
| Nucleation and buffer layers for group iii-nitride based semiconductor devices M Azize, L Xia, B Lu, T Palacios US Patent App. 14/704,269, 2015 | 8 | 2015 |
| Enhancing p-channel InGaSb QW-FETs via process-induced compressive uniaxial strain LW Guo, L Xia, BR Bennett, JB Boos, MG Ancona, JA del Alamo IEEE Electron Device Letters 35 (11), 1088-1090, 2014 | 8 | 2014 |
| Random dopant induced threshold voltage fluctuations in double gate MOSFETs L Xia, X Can Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th …, 2004 | 8 | 2004 |
| Hybrid structure with separate controls B Lu, L Xia US Patent 9,754,937, 2017 | 7 | 2017 |
| Experimental Study of <110> Uniaxial Stress Effects on p-Channel GaAs Quantum-Well FETs L Xia, V Tokranov, SR Oktyabrsky, JA Del Alamo Electron Devices, IEEE Transactions on, 1-7, 2011 | 7* | 2011 |
| Impact of non-ideal waveforms on GaN power FET in magnetic resonant wireless power transfer system S Huang, J Zhang, W Wu, L Xia Chinese Journal of Electrical Engineering 5 (3), 30-41, 2019 | 6 | 2019 |
Brian R. BennettWashington-Liberty High School; formerly Naval Research Laboratory (NRL), ONR, and MIT在 navy.mil 的电子邮件经过验证