A comprehensive review of ZnO materials and devices Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ... Journal of applied physics 98 (4), 041301, 2005 | 14255* | 2005 |
Zinc oxide: fundamentals, materials and device technology H Morkoç, Ü Özgür John Wiley & Sons, 2008 | 2098 | 2008 |
ZnO devices and applications: a review of current status and future prospects Ü Özgür, D Hofstetter, H Morkoc Proceedings of the IEEE 98 (7), 1255-1268, 2010 | 1018 | 2010 |
Excitonic fine structure and recombination dynamics in single-crystalline A Teke, Ü Özgür, S Doğan, X Gu, H Morkoç, B Nemeth, J Nause, ... Physical Review B—Condensed Matter and Materials Physics 70 (19), 195207, 2004 | 882 | 2004 |
Transparent conducting oxides for electrode applications in light emitting and absorbing devices H Liu, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç Superlattices and Microstructures 48 (5), 458-484, 2010 | 836 | 2010 |
Microwave ferrites, part 1: fundamental properties Ü Özgür, Y Alivov, H Morkoç Journal of materials science: Materials in electronics 20, 789-834, 2009 | 589 | 2009 |
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers J Xie, X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 93 (12), 2008 | 445 | 2008 |
Micro-LEDs, a manufacturability perspective K Ding, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç Applied Sciences 9 (6), 1206, 2019 | 288 | 2019 |
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells X Ni, Q Fan, R Shimada, Ü Özgür, H Morkoç Applied Physics Letters 93 (17), 2008 | 284 | 2008 |
Refractive indices and absorption coefficients of alloys CW Teng, JF Muth, Ü Özgür, MJ Bergmann, HO Everitt, AK Sharma, C Jin, ... Applied Physics Letters 76 (8), 979-981, 2000 | 277 | 2000 |
Microwave ferrites, part 2: passive components and electrical tuning Ü Özgür, Y Alivov, H Morkoç Journal of Materials Science: Materials in Electronics 20, 911-952, 2009 | 212 | 2009 |
Photoresponse of n-ZnO∕ p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy YI Alivov, Ü Özgür, S Doğan, D Johnstone, V Avrutin, N Onojima, C Liu, ... Applied Physics Letters 86 (24), 2005 | 187 | 2005 |
GaN-based light-emitting diodes: Efficiency at high injection levels Ü Ozgur, H Liu, X Li, X Ni, H Morkoc Proceedings of the IEEE 98 (7), 1180-1196, 2010 | 165 | 2010 |
High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç Applied Physics Letters 91 (13), 2007 | 162 | 2007 |
Recent development of boron nitride towards electronic applications N Izyumskaya, DO Demchenko, S Das, Ü Özgür, V Avrutin, H Morkoç Advanced Electronic Materials 3 (5), 1600485, 2017 | 144 | 2017 |
Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films Ü Özgür, A Teke, C Liu, SJ Cho, H Morkoç, HO Everitt Applied Physics Letters 84 (17), 3223-3225, 2004 | 142 | 2004 |
Control of coherent acoustic phonons in semiconductor quantum wells Ü Özgür, CW Lee, HO Everitt Physical Review Letters 86 (24), 5604, 2001 | 136 | 2001 |
Cavity polaritons in ZnO-based hybrid microcavities R Shimada, J Xie, V Avrutin, Ü Özgür, H Morkoč Applied Physics Letters 92 (1), 2008 | 129 | 2008 |
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ... Applied Physics Letters 97 (3), 2010 | 118 | 2010 |
Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran Applied physics letters 90 (18), 2007 | 114 | 2007 |