Truy cập công khai

Anderson transition in three-dimensional systems with non-Hermitian disorder

Y Huang, BI Shklovskii

Physical Review B 101 (1), 014204, 2020

Các cơ quan ủy nhiệm: US National Science Foundation

Metal–insulator transition in films of doped semiconductor nanocrystals

T Chen, KV Reich, NJ Kramer, H Fu, UR Kortshagen, BI Shklovskii

Nature materials 15 (3), 299-303, 2016

Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy

Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

H Fu, KV Reich, BI Shklovskii

Physical Review B 93 (12), 125430, 2016

Các cơ quan ủy nhiệm: US National Science Foundation

ZnO nanocrystal networks near the insulator–metal transition: tuning contact radius and electron density with intense pulsed light

BL Greenberg, ZL Robinson, KV Reich, C Gorynski, BN Voigt, LF Francis, ...

Nano letters 17 (8), 4634-4642, 2017

Các cơ quan ủy nhiệm: US National Science Foundation

Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

M Sammon, MA Zudov, BI Shklovskii

Physical Review Materials 2 (6), 064604, 2018

Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy

Exciton transfer in array of epitaxially connected nanocrystals

KV Reich, BI Shklovskii

ACS nano 10 (11), 10267-10274, 2016

Các cơ quan ủy nhiệm: US National Science Foundation

Disorder from the bulk ionic liquid in electric double layer transistors

TA Petach, KV Reich, X Zhang, K Watanabe, T Taniguchi, BI Shklovskii, ...

ACS nano 11 (8), 8395-8400, 2017

Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …

Spectral rigidity of non-Hermitian symmetric random matrices near the Anderson transition

Y Huang, BI Shklovskii

Physical Review B 102 (6), 064212, 2020

Các cơ quan ủy nhiệm: US National Science Foundation

Compensation-driven superconductor-insulator transition

M Müller, BI Shklovskii

Physical Review B—Condensed Matter and Materials Physics 79 (13), 134504, 2009

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

Y Huang, Y He, B Skinner, BI Shklovskii

Physical Review B 105 (5), 054206, 2022

Các cơ quan ủy nhiệm: US National Science Foundation

Dielectric constant and charging energy in array of touching nanocrystals

KV Reich, BI Shklovskii

Applied Physics Letters 108 (11), 2016

Các cơ quan ủy nhiệm: US National Science Foundation

Surface roughness scattering in multisubband accumulation layers

H Fu, KV Reich, BI Shklovskii

Physical Review B 93 (23), 235312, 2016

Các cơ quan ủy nhiệm: US National Science Foundation

Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs heterostructures

M Sammon, T Chen, BI Shklovskii

Physical Review Materials 2 (10), 104001, 2018

Các cơ quan ủy nhiệm: US National Science Foundation

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Y Huang, BI Shklovskii, MA Zudov

Physical Review Materials 6 (6), L061001, 2022

Các cơ quan ủy nhiệm: US Department of Energy

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Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3

F Trier, KV Reich, DV Christensen, Y Zhang, HL Tuller, Y Chen, ...

Applied Physics Letters 111 (9), 2017

Các cơ quan ủy nhiệm: US National Science Foundation

Attraction of indirect excitons in van der Waals heterostructures with three semiconducting layers

M Sammon, BI Shklovskii

Physical Review B 99 (16), 165403, 2019

Các cơ quan ủy nhiệm: US National Science Foundation

Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in

H Fu, KV Reich, BI Shklovskii

Physical Review B 94 (4), 045310, 2016

Các cơ quan ủy nhiệm: US National Science Foundation

Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder

Y Huang, B Skinner, BI Shklovskii

Journal of Experimental and Theoretical Physics 135 (4), 409-425, 2022

Các cơ quan ủy nhiệm: US National Science Foundation

Vortex variable range hopping in a conventional superconducting film

IM Percher, I Volotsenko, A Frydman, BI Shklovskii, AM Goldman

Physical Review B 96 (22), 224511, 2017

Các cơ quan ủy nhiệm: US National Science Foundation