Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen
2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016
130 2016 Digital integrated circuits on an E-mode GaN power HEMT platform G Tang, AMH Kwan, RKY Wong, J Lei, RY Su, FW Yao, YM Lin, JL Yu, ...
IEEE Electron Device Letters 38 (9), 1282-1285, 2017
109 2017 High-speed, high-reliability GaN power device with integrated gate driver G Tang, MH Kwan, Z Zhang, J He, J Lei, RY Su, FW Yao, YM Lin, JL Yu, ...
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
88 2018 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
78 2017 Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment Q Qian, Z Zhang, M Hua, G Tang, J Lei, F Lan, Y Xu, R Yan, KJ Chen
Nanotechnology 28 (17), 175202, 2017
45 2017 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen
npj 2D Materials and Applications 3 (1), 24, 2019
42 2019 Dynamic OFF-State Current (Dynamic Y Wang, M Hua, G Tang, J Lei, Z Zheng, J Wei, KJ Chen
IEEE Electron Device Letters 39 (9), 1366-1369, 2018
37 2018 Reverse-blocking normally-OFF GaN double-channel MOS-HEMT with low reverse leakage current and low ON-state resistance J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (7), 1003-1006, 2018
35 2018 Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices Y Wang, G Lyu, J Wei, Z Zheng, J He, J Lei, KJ Chen
IEEE Transactions on Industrial Electronics 67 (12), 10284-10294, 2019
33 2019 An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss J Lei, J Wei, G Tang, Q Qian, M Hua, Z Zhang, Z Zheng, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2017
33 2017 Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx /GaN MIS-FETs M Hua, J Wei, Q Bao, J He, Z Zhang, Z Zheng, J Lei, KJ Chen
2017 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2017
30 2017 Channel-to-channel coupling in normally-off GaN double-channel MOS-HEMT J Wei, J Lei, X Tang, B Li, S Liu, KJ Chen
IEEE Electron Device Letters 39 (1), 59-62, 2017
29 2017 GaN HEMT with convergent channel for low intrinsic knee voltage Z Zheng, W Song, J Lei, Q Qian, J Wei, M Hua, S Yang, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (9), 1304-1307, 2020
25 2020 Investigation of Dynamic Y Wang, J Wei, S Yang, J Lei, M Hua, KJ Chen
IEEE Transactions on Electron Devices 66 (9), 3789-3794, 2019
20 2019 Reverse-conducting normally-OFF double-channel AlGaN/GaN power transistor with interdigital built-in Schottky barrier diode J Lei, J Wei, G Tang, Q Qian, Z Zhang, M Hua, Z Zheng, KJ Chen
IEEE Transactions on Electron Devices 66 (5), 2106-2112, 2019
17 2019 Reverse-blocking AlGaN/GaN normally-off MIS-HEMT with double-recessed gated Schottky drain J Lei, J Wei, G Tang, KJ Chen
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
15 2018 High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation L Zhu, Q Zhou, X Yang, J Lei, K Chen, Z Luo, P Huang, C Zhou, KJ Chen, ...
IEEE Transactions on Electron Devices 67 (10), 4136-4140, 2020
11 2020 A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor Y Wang, G Lyu, J Wei, Z Zheng, J Lei, W Song, L Zhang, M Hua, KJ Chen
Applied Physics Express 12 (10), 106505, 2019
10 2019 Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET Q Qian, Z Zhang, M Hua, J Wei, J Lei, KJ Chen
Applied Physics Express 10 (12), 125201, 2017
5 2017 A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic L Zhu, Q Zhou, K Chen, X Yang, J Lei, Z Luo, C Zhou, KJ Chen, B Zhang
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
2 2020