p-doped 1.3 μm InAs∕ GaAs quantum-dot laser with a low threshold current density and high differential efficiency HY Liu, SL Liew, T Badcock, DJ Mowbray, MS Skolnick, SK Ray, TL Choi, ...
Applied Physics Letters 89 (7), 2006
111 2006 Optical transitions in type-II InAs∕ GaAs quantum dots covered by a GaAsSb strain-reducing layer CY Jin, HY Liu, SY Zhang, Q Jiang, SL Liew, M Hopkinson, TJ Badcock, ...
Applied Physics Letters 91 (2), 2007
108 2007 Ultrafast non-local control of spontaneous emission CY Jin, R Johne, MY Swinkels, TB Hoang, L Midolo, PJ van Veldhoven, ...
Nature Nanotechnology 9 (11), 886-890, 2014
83 2014 Photonic switching devices based on semiconductor nanostructures (Topical Review) CY Jin, O Wada
Journal of Physics D: Applied Physics 47, 133001, 2014
58 2014 Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3- CY Jin, TJ Badcock, HY Liu, KM Groom, RJ Royce, DJ Mowbray, ...
IEEE journal of quantum electronics 42 (12), 1259-1265, 2006
54 2006 1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer HY Liu, Y Qiu, CY Jin, T Walther, AG Cullis
Applied Physics Letters 92 (11), 2008
53 2008 Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity CY Jin, O Kojima, T Kita, O Wada, M Hopkinson, K Akahane
Applied Physics Letters 95 (2), 021109, 2009
47 2009 Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field CY Jin, YZ Huang, LJ Yu, S Deng
IEEE journal of quantum electronics 40 (5), 513-518, 2004
41 2004 1.3 µm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature TJ Badcock, HY Liu, KM Groom, CY Jin, M Gutierrez, M Hopkinson, ...
Electronics Letters 42 (16), 922-923, 2006
38 2006 Monolithically integrated electrically pumped continuous-wave III-V quantum dot light sources on silicon M Liao, S Chen, S Huo, S Chen, J Wu, M Tang, K Kennedy, W Li, S Kumar, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-10, 2017
36 2017 Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes ZY Zhang, IJ Luxmoore, CY Jin, HY Liu, Q Jiang, KM Groom, DT Childs, ...
Applied Physics Letters 91 (8), 2007
34 2007 Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications S Behera, PW Fry, H Francis, CY Jin, M Hopkinson
Scientific reports 10 (1), 6269, 2020
30 2020 1.34 µm GaInNAs quantum well lasers with low room-temperature threshold current density M Hopkinson, CY Jin, HY Liu, P Navaretti, R Airey
Electronics Letters 42 (16), 923-924, 2006
29 2006 Double-pulse generation of indistinguishable single photons with optically controlled polarization J Yan, S Liu, X Lin, Y Ye, J Yu, L Wang, Y Yu, Y Zhao, Y Meng, X Hu, ...
Nano Letters 22 (4), 1483-1490, 2022
28 2022 Precise arrays of epitaxial quantum dots nucleated by in situ laser interference for quantum information technology applications YR Wang, IS Han, CY Jin, M Hopkinson
ACS applied nano materials 3 (5), 4739-4746, 2020
26 2020 Control of the electromagnetic environment of a quantum emitter by shaping the vacuum field in a coupled-cavity system R Johne, R Schutjens, S Fattah poor, CY Jin, A Fiore
Physical Review A 91 (6), 063807, 2015
26 2015 Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector CY Jin, S Ohta, M Hopkinson, O Kojima, T Kita, O Wada
Applied Physics Letters 96 (15), 2010
25 2010 Detailed design and characterization of all-optical switches based on InAs/GaAs quantum dots in a vertical cavity CY Jin, O Kojima, T Inoue, T Kita, O Wada, M Hopkinson, K Akahane
IEEE journal of quantum electronics 46 (11), 1582-1589, 2010
24 2010 Observation of phase shifts in a vertical cavity quantum dot switch CY Jin, O Kojima, T Kita, O Wada, M Hopkinson
Applied Physics Letters 98 (23), 2011
22 2011 Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots J Yuan, H Wang, RPJ van Veldhoven, J Wang, T de Vries, B Smalbrugge, ...
Applied Physics Letters 98 (20), 2011
21 2011 
Mark HopkinsonUniversity of SheffieldEmail được xác minh tại sheffield.ac.uk