Các bài viết có thể truy cập công khai - Jim SpeckTìm hiểu thêm
Không có ở bất kỳ nơi nào: 42
Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter
JM Smith, R Ley, MS Wong, YH Baek, JH Kang, CH Kim, MJ Gordon, ...
Applied Physics Letters 116 (7), 2020
Các cơ quan ủy nhiệm: US National Science Foundation
Hybrid tunnel junction contacts to III–nitride light-emitting diodes
EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ...
Applied Physics Express 9 (2), 022102, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Many-electron effects on the dielectric function of cubic : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
M Feneberg, J Nixdorf, C Lidig, R Goldhahn, Z Galazka, O Bierwagen, ...
Physical Review B 93 (4), 045203, 2016
Các cơ quan ủy nhiệm: German Research Foundation
Improved growth rates and purity of basic ammonothermal GaN
S Pimputkar, S Kawabata, JS Speck, S Nakamura
Journal of Crystal Growth 403, 7-17, 2014
Các cơ quan ủy nhiệm: US Department of Energy
Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures
P Vogt, A Mauze, F Wu, B Bonef, JS Speck
Applied Physics Express 11 (11), 115503, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs
R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes
NG Young, RM Farrell, S Oh, M Cantore, F Wu, S Nakamura, ...
Applied Physics Letters 108 (6), 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to∼ 1 W
SH Oh, BP Yonkee, M Cantore, RM Farrell, JS Speck, S Nakamura, ...
Applied Physics Express 9 (10), 102102, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction
AI Alhassan, EC Young, AY Alyamani, A Albadri, S Nakamura, ...
Applied Physics Express 11 (4), 042101, 2018
Các cơ quan ủy nhiệm: US National Science Foundation
Direct measurement of nanoscale lateral carrier diffusion: toward scanning diffusion microscopy
M Mensi, R Ivanov, TK Uzdavinys, KM Kelchner, S Nakamura, ...
Acs Photonics 5 (2), 528-534, 2018
Các cơ quan ủy nhiệm: Swedish Research Council
Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
F Alema, B Hertog, AV Osinsky, P Mukhopadhyay, M Toporkov, ...
Oxide-based Materials and Devices VIII 10105, 242-249, 2017
Các cơ quan ủy nhiệm: US Department of Defense
Calcium as a nonradiative recombination center in InGaN
JX Shen, D Wickramaratne, CE Dreyer, A Alkauskas, E Young, JS Speck, ...
Applied Physics Express 10 (2), 021001, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, European Commission
Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser
SG Lee, S Mishkat-Ul-Masabih, JT Leonard, DF Feezell, DA Cohen, ...
Applied Physics Express 10 (1), 011001, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography
B Bonef, R Cramer, JS Speck
Journal of Applied Physics 121 (22), 2017
Các cơ quan ủy nhiệm: US National Science Foundation
Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
NG Young, RM Farrell, M Iza, S Nakamura, SP DenBaars, C Weisbuch, ...
Journal of Crystal Growth 455, 105-110, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202 1) III-nitride laser diodes with chemically assisted ion beam etched …
DL Becerra, LY Kuritzky, J Nedy, A Saud Abbas, A Pourhashemi, ...
Applied Physics Letters 108 (9), 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Low-energy ion-induced single-event burnout in gallium oxide Schottky diodes
RM Cadena, DR Ball, EX Zhang, S Islam, A Senarath, MW McCurdy, ...
IEEE Transactions on Nuclear Science 70 (4), 363-369, 2023
Các cơ quan ủy nhiệm: US Department of Defense
Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces
O Bierwagen, J Rombach, JS Speck
Journal of Physics: Condensed Matter 28 (22), 224006, 2016
Các cơ quan ủy nhiệm: German Research Foundation
Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
E Farzana, S Roy, NS Hendricks, S Krishnamoorthy, JS Speck
Applied Physics Letters 123 (19), 2023
Các cơ quan ủy nhiệm: US Department of Defense
High-temperature corrosion of Inconel® Alloy 718, Haynes® 282® Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution
ACL Kimmel, TF Malkowski, S Griffiths, B Hertweck, TG Steigerwald, ...
Journal of Crystal Growth 498, 289-300, 2018
Các cơ quan ủy nhiệm: German Research Foundation
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