Sub-10 nm carbon nanotube transistor AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
1156 2012 Atomistic simulation of nanowires in the M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006
514 2006 The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
299 2021 Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck
Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009
287 2009 Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling M Luisier, G Klimeck
Journal of Applied Physics 107 (8), 2010
227 2010 On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 2010
227 2010 Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors M Luisier, G Klimeck
IEEE Electron Device Letters 30 (6), 602-604, 2009
199 2009 Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations A Kuzmin, M Luisier, O Schenk
Euro-Par 2013 Parallel Processing: 19th International Conference, Aachen …, 2013
193 2013 Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism M Luisier, A Schenk, W Fichtner
Journal of Applied physics 100 (4), 2006
180 2006 Soft surfaces of nanomaterials enable strong phonon interactions D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ...
Nature 531, 618-622, 2016
179 2016 Atomic Scale Plasmonic Switch A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ...
Nano letters 16, 709-714, 2016
168 2016 Performance comparisons of tunneling field-effect transistors made of InSb, carbon, and GaSb-InAs broken gap heterostructures M Luisier, G Klimeck
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
130 2009 Ab initio simulation of single- and few-layer Á Szabó, R Rhyner, M Luisier
Physical Review B 92 (3), 035435, 2015
118 2015 One-dimensional edge contacts to a monolayer semiconductor A Jain, Á Szabó, M Parzefall, E Bonvin, T Taniguchi, K Watanabe, ...
Nano letters 19 (10), 6914-6923, 2019
112 2019 Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...
ACS applied materials & interfaces 12 (15), 17725-17732, 2020
104 2020 Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors S Agarwal, G Klimeck, M Luisier
IEEE Electron Device Letters 31 (6), 621-623, 2010
103 2010 Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ...
IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012
100 2012 Tuning electron–phonon interactions in nanocrystals through surface termination N Yazdani, D Bozyigit, K Vuttivorakulchai, M Luisier, I Infante, V Wood
Nano letters 18 (4), 2233-2242, 2018
99 2018 Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics A Szabo, S Koester, M Luisier
IEEE Electron Device Letters, 2015
99 2015 Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness M Luisier, G Klimeck
Applied Physics Letters 94 (22), 2009
99 2009 
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityEmail được xác minh tại purdue.edu