Các bài viết có thể truy cập công khai - Shi-Jun LiangTìm hiểu thêm
Không có ở bất kỳ nơi nào: 5
Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding
L Zhang, G Wang, Y Zhang, Z Cao, Y Wang, T Cao, C Wang, B Cheng, ...
ACS nano 14 (8), 10265-10275, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
In-sensor dynamic computing for intelligent machine vision
Y Yang, C Pan, Y Li, X Yangdong, P Wang, ZA Li, S Wang, W Yu, G Liu, ...
Nature Electronics 7 (3), 225-233, 2024
Các cơ quan ủy nhiệm: Chinese Academy of Sciences, National Natural Science Foundation of China
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides through Substitutional Vanadium Doping
L Zhang, Z Wang, J Zhang, B Chen, Z Liang, X Quan, Y Dai, J Huang, ...
Advanced Functional Materials 32 (46), 2204760, 2022
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
2D materials for intelligent devices
X Pan, Y Li, B Cheng, SJ Liang, F Miao
Science China Physics, Mechanics & Astronomy 66 (11), 117504, 2023
Các cơ quan ủy nhiệm: Chinese Academy of Sciences, National Natural Science Foundation of China
Highly Stable HfO2 Memristors through van der Waals Electrode Lamination and Delamination
W Tong, W Wei, X Zhang, S Ding, Z Lu, L Liu, W Li, C Pan, L Kong, ...
Nano Letters 23 (21), 9928-9935, 2023
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Có tại một số nơi: 56
Robust memristors based on layered two-dimensional materials
M Wang, S Cai, C Pan, C Wang, X Lian, Y Zhuo, K Xu, T Cao, X Pan, ...
Nature Electronics 1 (2), 130-136, 2018
Các cơ quan ủy nhiệm: US Department of Defense, National Natural Science Foundation of China
2022 roadmap on neuromorphic computing and engineering
DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
Các cơ quan ủy nhiệm: US National Science Foundation, Swiss National Science Foundation, US …
Van der Waals heterostructures for high‐performance device applications: challenges and opportunities
SJ Liang, B Cheng, X Cui, F Miao
Advanced Materials 32 (27), 1903800, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
CY Wang, SJ Liang, S Wang, P Wang, Z Li, Z Wang, A Gao, C Pan, C Liu, ...
Science Advances 6 (26), eaba6173, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions
C Pan, CY Wang, SJ Liang, Y Wang, T Cao, P Wang, C Wang, S Wang, ...
Nature Electronics 3 (7), 383-390, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Broadband convolutional processing using band-alignment-tunable heterostructures
L Pi, P Wang, SJ Liang, P Luo, H Wang, D Li, Z Li, P Chen, X Zhou, ...
Nature Electronics 5 (4), 248-254, 2022
Các cơ quan ủy nhiệm: Chinese Academy of Sciences, National Natural Science Foundation of China
Synergistic effects of plasmonics and electron trapping in graphene short-wave infrared photodetectors with ultrahigh responsivity
Z Chen, X Li, J Wang, L Tao, M Long, SJ Liang, LK Ang, C Shu, HK Tsang, ...
ACS nano 11 (1), 430-437, 2017
Các cơ quan ủy nhiệm: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Strain‐sensitive magnetization reversal of a van der Waals magnet
Y Wang, C Wang, SJ Liang, Z Ma, K Xu, X Liu, L Zhang, AS Admasu, ...
Advanced Materials 32 (42), 2004533, 2020
Các cơ quan ủy nhiệm: Gordon and Betty Moore Foundation, Chinese Academy of Sciences, National …
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Q Wang, L Cao, SJ Liang, W Wu, G Wang, CH Lee, WL Ong, HY Yang, ...
npj 2D Materials and Applications 5 (1), 71, 2021
Các cơ quan ủy nhiệm: Fundação para a Ciência e a Tecnologia, Portugal
Negative photoconductance in van der Waals heterostructure-based floating gate phototransistor
Y Wang, E Liu, A Gao, T Cao, M Long, C Pan, L Zhang, J Zeng, C Wang, ...
ACS nano 12 (9), 9513-9520, 2018
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception
S Wang, CY Wang, P Wang, C Wang, ZA Li, C Pan, Y Dai, A Gao, C Liu, ...
National science review 8 (2), nwaa172, 2021
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
2D layered materials for memristive and neuromorphic applications
CY Wang, C Wang, F Meng, P Wang, S Wang, SJ Liang, F Miao
Advanced Electronic Materials 6 (2), 1901107, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors
A Di Bartolomeo, A Pelella, X Liu, F Miao, M Passacantando, F Giubileo, ...
Advanced Functional Materials 29 (29), 1902483, 2019
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Gate-Induced Interfacial Superconductivity in 1T-SnSe2
J Zeng, E Liu, Y Fu, Z Chen, C Pan, C Wang, M Wang, Y Wang, K Xu, ...
Nano letters 18 (2), 1410-1415, 2018
Các cơ quan ủy nhiệm: US Department of Energy, National Natural Science Foundation of China
Straintronics with van der Waals materials
F Miao, SJ Liang, B Cheng
npj Quantum Materials 6 (1), 59, 2021
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
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