| Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si AD Bolshakov, VV Fedorov, KY Shugurov, AM Mozharov, GA Sapunov, ... Nanotechnology 30 (39), 395602, 2019 | 36 | 2019 |
| Dopant-stimulated growth of GaN nanotube-like nanostructures on Si (111) by molecular beam epitaxy AD Bolshakov, AM Mozharov, GA Sapunov, IV Shtrom, NV Sibirev, ... Beilstein journal of nanotechnology 9 (1), 146-154, 2018 | 36 | 2018 |
| Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy VV Fedorov, AD Bolshakov, DA Kirilenko, AM Mozharov, AA Sitnikova, ... CrystEngComm 20 (24), 3370-3380, 2018 | 32 | 2018 |
| Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems A Babichev, S Blokhin, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ... IEEE Photonics Technology Letters 35 (6), 297-300, 2023 | 27 | 2023 |
| Self-catalyzed mbe-grown gap nanowires on si (111): V/iii ratio effects on the morphology and crystal phase switching VV Fedorov, AD Bolshakov, LN Dvoretckaia, GA Sapunov, DA Kirilenko, ... Semiconductors 52, 2092-2095, 2018 | 24 | 2018 |
| Theoretical modeling of the self-catalyzed nanowire growth: nucleation-and adsorption-limited regimes AD Bolshakov, AM Mozharov, GA Sapunov, VV Fedorov, LN Dvoretckaia, ... Materials Research Express 4 (12), 125027, 2017 | 24 | 2017 |
| Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane OY Koval, VV Fedorov, AD Bolshakov, SV Fedina, FM Kochetkov, ... Nanomaterials 10 (11), 2110, 2020 | 23 | 2020 |
| Microlens-enhanced substrate patterning and MBE growth of GaP nanowires AD Bolshakov, LN Dvoretckaia, VV Fedorov, GA Sapunov, AM Mozharov, ... Semiconductors 52, 2088-2091, 2018 | 21 | 2018 |
| Effective Suppression of Antiphase Domains in GaP (N)/GaP Heterostructures on Si (001) AD Bolshakov, VV Fedorov, OY Koval, GA Sapunov, MS Sobolev, ... Crystal Growth & Design 19 (8), 4510-4520, 2019 | 20 | 2019 |
| Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates VV Fedorov, Y Berdnikov, NV Sibirev, AD Bolshakov, SV Fedina, ... Nanomaterials 11 (8), 1949, 2021 | 18 | 2021 |
| Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface KY Shugurov, AM Mozharov, AD Bolshakov, VV Fedorov, GA Sapunov, ... Nanotechnology 31 (24), 244003, 2020 | 13 | 2020 |
| Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon OY Koval, VV Fedorov, NV Kryzhanovskaya, GA Sapunov, DA Kirilenko, ... CrystEngComm 22 (2), 283-292, 2020 | 11 | 2020 |
| XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires OY Koval, VV Fedorov, AD Bolshakov, IE Eliseev, SV Fedina, ... Nanomaterials 11 (4), 960, 2021 | 7 | 2021 |
| Single GaN Nanowires for Extremely High Current Commutation K Shugurov, A Mozharov, G Sapunov, V Fedorov, M Tchernycheva, ... physica status solidi (RRL)–Rapid Research Letters 15 (4), 2000590, 2021 | 6 | 2021 |
| Synthesis and optical characterization of GaAs epitaxial nanoparticles on silicon GA Sapunov, VV Fedorov, OY Koval, VA Sharov, LN Dvoretckaia, ... Crystal Growth & Design 20 (1), 300-306, 2019 | 5 | 2019 |
| Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential AM Mozharov, AA Vasiliev, AD Bolshakov, GA Sapunov, VV Fedorov, ... Semiconductors 52, 489-492, 2018 | 5 | 2018 |
| Modeling the semiconductor devices with negative differential resistance based on nitride nanowires AM Mozharov, FE Komissarenko, AD Bolshakov, VV Fedorov, ... Journal of Physics: Conference Series 917 (8), 082017, 2017 | 5 | 2017 |
| Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells KU Shugurov, AM Mozharov, GA Sapunov, VV Fedorov, AD Bolshakov, ... Journal of Physics: Conference Series 993 (1), 012034, 2018 | 4 | 2018 |
| Growth and optical properties of GaPN/GaP heterostructure nanowire array OY Koval, GA Sapunov, VV Fedorov, IS Mukhin Journal of Physics: Conference Series 1400 (5), 055036, 2019 | 3 | 2019 |
| High-speed MBE-grown 1550 nm wafer-fused VCSELs G Sapunov, SC Tian, S Blokhin, I Kovach, D Papylev, S Rochas, ... Vertical-Cavity Surface-Emitting Lasers XXVIII 12904, 156-163, 2024 | 2 | 2024 |
Vladimir FedorovSt. Petersburg Academic University of Russian Academy of SciencesEmail được xác minh tại spbstu.ru