Các bài viết có thể truy cập công khai - Deji AkinwandeTìm hiểu thêm
Tổng thểNSFDoDNSFCDOEEuropean CommissionUSAIDFCTDSTNIHFWFANRGovernment of SpainGovernment of ItalyDFGCASEPSRCNERCFondazione CariploBMBFNASAGBMFARCLeibniz AssociationAcademy of FinlandTekesSFIResearch Council of LithuaniaSwedish Research CouncilA*StarSTFCMESTDNCNNational Research Foundation, SingaporeLeducq Foundation, USAJST
Không có ở bất kỳ nơi nào: 34
Recent advances in two-dimensional materials beyond graphene
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...
ACS nano 9 (12), 11509-11539, 2015
Các cơ quan ủy nhiệm: US Department of Energy
Graphene and two-dimensional materials for silicon technology
D Akinwande, C Huyghebaert, CH Wang, MI Serna, S Goossens, LJ Li, ...
Nature 573 (7775), 507-518, 2019
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense, Government of Spain
Black phosphorus flexible thin film transistors at gighertz frequencies
W Zhu, S Park, MN Yogeesh, KM McNicholas, SR Bank, D Akinwande
Nano letters 16 (4), 2301-2306, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Large-area dry transfer of single-crystalline epitaxial bismuth thin films
ES Walker, SR Na, D Jung, SD March, JS Kim, T Trivedi, W Li, L Tao, ...
Nano letters 16 (11), 6931-6938, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Support-free transfer of ultrasmooth graphene films facilitated by self-assembled monolayers for electronic devices and patterns
B Wang, M Huang, L Tao, SH Lee, AR Jang, BW Li, HS Shin, ...
ACS nano 10 (1), 1404-1410, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Characterization and sonochemical synthesis of black phosphorus from red phosphorus
SH Aldave, MN Yogeesh, W Zhu, J Kim, SS Sonde, AP Nayak, ...
2D Materials 3 (1), 014007, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Advancements in 2D flexible nanoelectronics: from material perspectives to RF applications
W Zhu, S Park, MN Yogeesh, D Akinwande
Flexible and Printed Electronics 2 (4), 043001, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Plasmon–trion and plasmon–exciton resonance energy transfer from a single plasmonic nanoparticle to monolayer MoS 2
M Wang, W Li, L Scarabelli, BB Rajeeva, M Terrones, LM Liz-Marzán, ...
Nanoscale 9 (37), 13947-13955, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense, European Commission
Un-doped and Er-adsorbed layered Nb2C MXene for efficient hydrazine sensing application
S Gul, MI Serna, SA Zahra, N Arif, M Iqbal, D Akinwande, S Rizwan
Surfaces and Interfaces 24, 101074, 2021
Các cơ quan ủy nhiệm: US Agency for International Development
Atomristors: Memory effect in atomically-thin sheets and record RF switches
R Ge, X Wu, M Kim, PA Chen, J Shi, J Choi, X Li, Y Zhang, MH Chiang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2018
Các cơ quan ủy nhiệm: US National Science Foundation
Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2
R Ghosh, JS Kim, A Roy, H Chou, M Vu, SK Banerjee, D Akinwande
Journal of Materials Research 31 (7), 917-922, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
All-graphene three-terminal-junction field-effect devices as rectifiers and inverters
W Kim, C Li, N Chekurov, S Arpiainen, D Akinwande, H Lipsanen, ...
ACS nano 9 (6), 5666-5674, 2015
Các cơ quan ủy nhiệm: Academy of Finland, Finnish Funding Agency for Innovation
Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications
SJ Yang, MM Dahan, O Levit, F Makal, P Peterson, J Alikpala, ...
Nano Letters 23 (4), 1152-1158, 2023
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Suppression of copper thin film loss during graphene synthesis
AL Lee, L Tao, D Akinwande
ACS applied materials & interfaces 7 (3), 1527-1532, 2015
Các cơ quan ủy nhiệm: UK Natural Environment Research Council
Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics
EM Krivoy, AP Vasudev, S Rahimi, RA Synowicki, KM McNicholas, ...
ACS Photonics 5 (8), 3051-3056, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Quantum conductance in vertical hexagonal boron nitride memristors with graphene-edge contacts
J Xie, MN Patoary, MA Rahman Laskar, ND Ignacio, X Zhan, U Celano, ...
Nano Letters 24 (8), 2473-2480, 2024
Các cơ quan ủy nhiệm: US National Science Foundation
Large area fabrication of graphene nanoribbons by wetting transparency-assisted block copolymer lithography
R Katsumata, MN Yogeesh, H Wong, SX Zhou, SM Sirard, T Huang, ...
Polymer 110, 131-138, 2017
Các cơ quan ủy nhiệm: US National Science Foundation
Ferroelectric MXene-assisted BiFeO3 based free-standing memristors for multifunctional non-volatile memory storage
K Sattar, R Tahir, H Huang, D Akinwande, S Rizwan
Carbon 221, 118931, 2024
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
First demonstration of high performance 2D monolayer transistors on paper substrates
S Park, D Akinwande
2017 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Comparative Studies of Atomically Thin Proton Conductive Films to Reduce Crossover in Hydrogen Fuel Cells
S Kutagulla, NH Le, IT Caldino Bohn, BJ Stacy, CS Favela, JJ Slack, ...
ACS applied materials & interfaces 15 (51), 59358-59369, 2023
Các cơ quan ủy nhiệm: US National Science Foundation
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