Theo dõi
juergen christen
juergen christen
Professor of Physics, Magdeburg University
Email được xác minh tại ovgu.de
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Bound exciton and donor–acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
20282004
Ultranarrow luminescence lines from single quantum dots
M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
10011995
Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
MA Herman, D Bimberg, J Christen
Journal of Applied Physics 70 (2), R1-R52, 1991
3991991
Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation
J Christen, D Bimberg
Physical Review B 42 (11), 7213, 1990
2331990
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ...
Applied Physics Letters 83 (16), 3290-3292, 2003
2252003
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
2222003
Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities
J Christen, M Grundmann, D Bimberg
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
1991991
Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
D Bimberg, J Christen, T Fukunaga, H Nakashima, DE Mars, JN Miller
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
1921987
Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ...
New Journal of Physics 9 (10), 389, 2007
1802007
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro …
F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, C Thomsen, ...
Applied Physics Letters 74 (3), 359-361, 1999
1771999
InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ...
physica status solidi (b) 188 (1), 249-258, 1995
1771995
Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells
W Witte, D Abou‐Ras, K Albe, GH Bauer, F Bertram, C Boit, ...
Progress in Photovoltaics: Research and Applications 23 (6), 717-733, 2015
1752015
Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick layers
A Bell, S Srinivasan, C Plumlee, H Omiya, FA Ponce, J Christen, ...
Journal of applied physics 95 (9), 4670-4674, 2004
1632004
Growth of blue GaN LED structures on 150-mm Si (1 1 1)
A Dadgar, C Hums, A Diez, J Bläsing, A Krost
Journal of Crystal Growth 297 (2), 279-282, 2006
1622006
Optical investigations of AlGaN on GaN epitaxial films
G Steude, T Christmann, BK Meyer, A Goeldner, A Hoffmann, F Bertram, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
1561999
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ...
Applied Physics Letters 90 (2), 2007
1532007
Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
O Contreras, FA Ponce, J Christen, A Dadgar, A Krost
Applied physics letters 81 (25), 4712-4714, 2002
1502002
Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates
M Walther, E Kapon, J Christen, DM Hwang, R Bhat
Applied physics letters 60 (5), 521-523, 1992
1501992
Self-organization processes in MBE-grown quantum dot structures
D Bimberg, M Grundmann, NN Ledentsov, SS Ruvimov, P Werner, ...
Thin Solid Films 267 (1-2), 32-36, 1995
1471995
Localization induced electron‐hole transition rate enhancement in GaAs quantum wells
J Christen, D Bimberg, A Steckenborn, G Weimann
Applied physics letters 44 (1), 84-86, 1984
1361984
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