InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
439 2012 Enhancement-Mode Ga2 O3 Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
320 2018 Field-Plated Ga2 O3 Trench Schottky Barrier Diodes With a BV2 /2 W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
280 2019 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
212 2015 1.7-kV and 0.55- K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
210 2015 Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 2015
207 2015 Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 2018
180 2018 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of< 1 μA/cm2 W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (20), 2018
165 2018 Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
130 2013 2.44 kV Ga2 O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
116 2018 Single and multi-fin normally-off Ga2 O3 vertical transistors with a breakdown voltage over 2.6 kV W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing
2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019
112 2019 GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ...
IEEE Electron Device Letters 41 (5), 689-692, 2020
109 2020 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs R Wang, G Li, J Verma, B Sensale-Rodriguez, T Fang, J Guo, Z Hu, ...
IEEE Electron device letters 32 (9), 1215-1217, 2011
98 2011 Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes W Li, K Nomoto, Z Hu, D Jena, HG Xing
Applied Physics Express 12 (6), 061007, 2019
82 2019 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
81 2017 GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2 K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
81 2015 Quaternary Barrier InAlGaN HEMTs With R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
81 2013 Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors S Ganguly, A Konar, Z Hu, H Xing, D Jena
Applied Physics Letters 101 (25), 2012
76 2012 High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 2015
68 2015 Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ...
Applied Physics Letters 113 (6), 2018
62 2018 
Debdeep JenaCornell UniversityEmail được xác minh tại cornell.edu
