Các bài viết có thể truy cập công khai - Hartwin PeelaersTìm hiểu thêm
Không có ở bất kỳ nơi nào: 7
Phonon band structure of Si nanowires: a stability analysis
H Peelaers, B Partoens, FM Peeters
Nano letters 9 (1), 107-111, 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Electronic and protonic conduction in LaFeO 3
Z Zhu, H Peelaers, CG Van de Walle
Journal of Materials Chemistry A 5 (29), 15367-15379, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
Carrier-induced absorption as a mechanism for electrochromism in tungsten trioxide
W Wang, H Peelaers, JX Shen, CG Van de Walle
MRS Communications 8 (3), 926-931, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Phonons in Ge nanowires
H Peelaers, B Partoens, FM Peeters
Applied Physics Letters 95 (12), 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
First-principles study of doped Si and Ge nanowires
H Peelaers, B Partoens, FM Peeters
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 2169-2171, 2008
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Impact of point defects on electrochromism in WO3
W Wang, H Peelaers, JX Shen, A Janotti, CG Van de Walle
Oxide-based Materials and Devices IX 10533, 218-227, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
First-Principles Calculations 1: Electronic and Structural Properties of Ga O and Alloys with In O and Al O
H Peelaers, CG Van de Walle
Gallium Oxide: Materials Properties, Crystal Growth, and Devices, 309-328, 2020
Các cơ quan ủy nhiệm: US Department of Defense
Có tại một số nơi: 46
First-principles investigation of graphene fluoride and graphane
O Leenaerts, H Peelaers, AD Hernández-Nieves, B Partoens, FM Peeters
Physical Review B—Condensed Matter and Materials Physics 82 (19), 195436, 2010
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Hydrogenated cation vacancies in semiconducting oxides
JB Varley, H Peelaers, A Janotti, CG Van de Walle
Journal of Physics: Condensed Matter 23 (33), 334212, 2011
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Structural and electronic properties of Ga2O3-Al2O3 alloys
H Peelaers, JB Varley, JS Speck, CG Van de Walle
Applied Physics Letters 112 (24), 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Deep acceptors and their diffusion in Ga2O3
H Peelaers, JL Lyons, JB Varley, CG Van de Walle
APL Materials 7 (2), 2019
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Nature and evolution of the band-edge states in : From monolayer to bulk
JE Padilha, H Peelaers, A Janotti, CG Van de Walle
Physical Review B 90 (20), 205420, 2014
Các cơ quan ủy nhiệm: US Department of Energy
Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films
Y Yu, Y Yu, Y Cai, W Li, A Gurarslan, H Peelaers, DE Aspnes, ...
Scientific reports 5, 16996, 2015
Các cơ quan ủy nhiệm: US Department of Energy
Fundamental limits on the electron mobility of β-Ga2O3
Y Kang, K Krishnaswamy, H Peelaers, CG Van de Walle
Journal of Physics: Condensed Matter 29 (23), 234001, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
alloys for transparent electronics
H Peelaers, D Steiauf, JB Varley, A Janotti, CG Van de Walle
Physical Review B 92 (8), 085206, 2015
Các cơ quan ủy nhiệm: US Department of Energy
Vibrational properties of graphene fluoride and graphane
H Peelaers, AD Hernandez-Nieves, O Leenaerts, B Partoens, FM Peeters
Applied Physics Letters 98 (5), 2011
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Controlling n-Type Doping in MoO3
H Peelaers, ML Chabinyc, CG Van de Walle
Chemistry of Materials 29 (6), 2563-2567, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
Doping of with transition metals
H Peelaers, CG Van de Walle
Physical Review B 94 (19), 195203, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1− x) 2O3
S Mu, M Wang, H Peelaers, CG Van de Walle
APL Materials 8 (9), 2020
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Sub-band-gap absorption in Ga2O3
H Peelaers, CG Van de Walle
Applied Physics Letters 111 (18), 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
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