| Impact of device scaling on the electrical properties of MoS2 field-effect transistors G Arutchelvan, Q Smets, D Verreck, Z Ahmed, A Gaur, S Sutar, J Jussot, ... Scientific reports 11 (1), 1-11, 2021 | 58 | 2021 |
| Introducing 2D-FETs in device scaling roadmap using DTCO Z Ahmed, A Afzalian, T Schram, D Jang, D Verreck, Q Smets, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2020 | 49 | 2020 |
| Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB Q Smets, T Schram, D Verreck, D Cott, B Groven, Z Ahmed, B Kaczer, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.2. 1-34.2. 4, 2021 | 27 | 2021 |
| Control of hexagonal boron nitride dielectric thickness by single layer etching Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan Journal of Materials Chemistry C 7 (21), 6273-6278, 2019 | 23 | 2019 |
| Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations Z Ahmed, Q Shi, Z Ma, L Zhang, H Guo, M Chan IEEE Electron Device Letters 41 (1), 171-174, 2019 | 17 | 2019 |
| Extended scale length theory targeting low-dimensional FETs for carbon nanotube FET digital logic design-technology co-optimization C Gilardi, B Chehab, G Sisto, P Schuddinck, Z Ahmed, O Zografos, Q Lin, ... 2021 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2021 | 16 | 2021 |
| Characterization of interface trap dynamics responsible for hysteresis in organic thin-film transistors Y Sun, L Zhang, Z Ahmed, M Chan Organic Electronics 27, 192-196, 2015 | 15 | 2015 |
| Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate Y Xiao, Z Ahmed, Z Ma, C Zhou, L Zhang, M Chan Nanomaterials 9 (3), 473, 2019 | 14 | 2019 |
| Origin of Nonideal Graphene-Silicon Schottky Junction X Zhang, L Zhang, Z Ahmed, M Chan IEEE Transactions on Electron Devices 65 (5), 1995-2002, 2018 | 14 | 2018 |
| Modeling of fringe current for semiconductor-extended organic TFTs HMD Kabir, Z Ahmed, R Kariyadan, L Zhang, M Chan 2016 IEEE International Conference on Electron Devices and Solid-State …, 2016 | 12 | 2016 |
| Coil-Shaped Electrodes to Reduce the Current Variation of Drop-Casted OTFTs HMD Kabir, Z Ahmed, L Zhang, M Chan IEEE Electron Device Letters 38 (5), 645-648, 2017 | 9 | 2017 |
| Modeling CNTFET Performance Variation Due to Spatial Distribution of Carbon Nanotubes Z Ahmed, L Zhang, K Sarfraz, M Chan IEEE Transactions on Electron Devices 63 (9), 3776-3781, 2016 | 7 | 2016 |
| Two-level MOL and VHV routing style to enable extreme height scaling beyond 2nm technology node B Chehab, O Zografos, ED Litta, Z Ahmed, P Schuddinck, D Jang, ... 2021 IEEE International Interconnect Technology Conference (IITC), 1-3, 2021 | 6 | 2021 |
| Gate capacitance model for aligned carbon nanotube FETs with arbitrary CNT spacing Z Ahmed, L Zhang, M Chan IEEE Transactions on Electron Devices 62 (12), 4327-4332, 2015 | 5 | 2015 |
| Carbon Nanotube-on-Graphene Heterostructures Y Zheng, D Li, Z Ahmed, J Park, C Zhou, CY Yang Journal of Electronic Materials 49 (11), 6806-6816, 2020 | 4 | 2020 |
| Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer HMD Kabir, Z Ahmed, R Kariyadan, L Zhang, M Chan Solid-State Electronics 144, 49-53, 2018 | 4 | 2018 |
| Low voltage SRAM design using tunneling regime of CNTFET Z Ahmed, K Sarfraz, L Zhang, M Chan 14th IEEE International Conference on Nanotechnology, 864-867, 2014 | 3 | 2014 |
| Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling A Afzalian, Z Ahmed, J Ryckaert Solid-State Electronics 199, 108524, 2023 | 2 | 2023 |
| Current Conduction Mechanisms in h-BN as a Dielectric Material Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | 2 | 2018 |
| Patterning CNT-forest for the fabrication of nano-channel OFET of high W/L HMD Kabir, S Raju, L Zhang, Z Ahmed, Y Sun, Z Changjian, MS Chan | 2 | 2016 |
