Các bài viết có thể truy cập công khai - Alberto MorpurgoTìm hiểu thêm
Không có ở bất kỳ nơi nào: 4
Electric‐Field Control of the Metal‐Insulator Transition in Ultrathin NdNiO3 Films
R Scherwitzl, P Zubko, IG Lezama, S Ono, AF Morpurgo, G Catalan, ...
Advanced Materials 22 (48), 5517-5520, 2010
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Persistence of Magnetism in Atomically Thin MnPS3 Crystals
G Long, H Henck, M Gibertini, D Dumcenco, Z Wang, T Taniguchi, ...
Nano letters 20 (4), 2452-2459, 2020
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Creating novel transport properties in electric double layer field effect transistors based on layered materials
JT Ye, MF Craciun, M Koshino, S Russo, Y Kasahara, HT Yuan, ...
MRS Online Proceedings Library (OPL) 1288, mrsf10-1288-g08-09, 2011
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Nanosession: 2D Electron Systems‐Correlation Effects and Transport
AF Santander‐Syro, C Bareille, F Fortuna, O Copie, F Bertran, ...
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the …, 2012
Các cơ quan ủy nhiệm: Austrian Science Fund
Có tại một số nơi: 93
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov, S Roche, P Bøggild, ...
Nanoscale 7 (11), 4598-4810, 2015
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Magnetic 2D materials and heterostructures
M Gibertini, M Koperski, AF Morpurgo, KS Novoselov
Nature nanotechnology 14 (5), 408-419, 2019
Các cơ quan ủy nhiệm: Swiss National Science Foundation, US Department of Defense, UK Engineering …
Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3
Z Wang, I Gutiérrez-Lezama, N Ubrig, M Kroner, M Gibertini, T Taniguchi, ...
Nature communications 9 (1), 2516, 2018
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Electrostatic modification of novel materials
CH Ahn, A Bhattacharya, M Di Ventra, JN Eckstein, CD Frisbie, ...
Reviews of Modern Physics 78 (4), 1185-1212, 2006
Các cơ quan ủy nhiệm: German Research Foundation
Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
D Braga, I Gutiérrez Lezama, H Berger, AF Morpurgo
Nano letters 12 (10), 5218-5223, 2012
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Trilayer graphene is a semimetal with a gate-tunable band overlap
MF Craciun, S Russo, M Yamamoto, JB Oostinga, AF Morpurgo, ...
Nature nanotechnology 4 (6), 383-388, 2009
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Mono- and Bilayer WS2 Light-Emitting Transistors
S Jo, N Ubrig, H Berger, AB Kuzmenko, AF Morpurgo
Nano letters 14 (4), 2019-2025, 2014
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Probing magnetism in 2D materials at the nanoscale with single-spin microscopy
L Thiel, Z Wang, MA Tschudin, D Rohner, I Gutiérrez-Lezama, N Ubrig, ...
Science 364 (6444), 973-976, 2019
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2
IG Lezama, A Arora, A Ubaldini, C Barreteau, E Giannini, M Potemski, ...
Nano letters 15 (4), 2336-2342, 2015
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Strong interface-induced spin–orbit interaction in graphene on WS2
Z Wang, DK Ki, H Chen, H Berger, AH MacDonald, AF Morpurgo
Nature communications 6 (1), 8339, 2015
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Gate-induced superconductivity in atomically thin MoS2 crystals
D Costanzo, S Jo, H Berger, AF Morpurgo
Nature nanotechnology 11 (4), 339-344, 2016
Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission
Tunneling Spin Valves Based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals Heterostructures
Z Wang, D Sapkota, T Taniguchi, K Watanabe, D Mandrus, AF Morpurgo
Nano letters 18 (7), 4303-4308, 2018
Các cơ quan ủy nhiệm: Swiss National Science Foundation, Gordon and Betty Moore Foundation …
Accessing the transport properties of graphene and its multilayers at high carrier density
J Ye, MF Craciun, M Koshino, S Russo, S Inoue, H Yuan, H Shimotani, ...
Proceedings of the National Academy of Sciences 108 (32), 13002-13006, 2011
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Gate-tuned normal and superconducting transport at the surface of a topological insulator
B Sacépé, JB Oostinga, J Li, A Ubaldini, NJG Couto, E Giannini, ...
Nature communications 2 (1), 575, 2011
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Aharonov-Bohm effect and broken valley degeneracy in graphene rings
P Recher, B Trauzettel, A Rycerz, YM Blanter, CWJ Beenakker, ...
Physical Review B—Condensed Matter and Materials Physics 76 (23), 235404, 2007
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Two-Dimensional Quantum Oscillations of the Conductance at Interfaces
AD Caviglia, S Gariglio, C Cancellieri, B Sacépé, A Fete, N Reyren, ...
Physical review letters 105 (23), 236802, 2010
Các cơ quan ủy nhiệm: Swiss National Science Foundation
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