Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ...
Applied Surface Science 301, 9-18, 2014
195 2014 Radiation hardening techniques for Er/Yb doped optical fibers and amplifiers for space application S Girard, M Vivona, A Laurent, B Cadier, C Marcandella, T Robin, ...
Optics express 20 (8), 8457-8465, 2012
132 2012 SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3 P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte
Applied Physics Letters 103 (15), 2013
103 2013 Selective doping in silicon carbide power devices F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo
Materials 14 (14), 3923, 2021
70 2021 Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ...
Semiconductor Science and Technology 29 (7), 075018, 2014
63 2014 Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2 O and POCl3 P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, ...
Applied Physics A 115, 333-339, 2014
48 2014 Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach S Girard, L Mescia, M Vivona, A Laurent, Y Ouerdane, C Marcandella, ...
Journal of Lightwave Technology 31 (8), 1247-1254, 2013
46 2013 Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements P Fiorenza, A La Magna, M Vivona, F Roccaforte
Applied Physics Letters 109 (1), 2016
41 2016 Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, C Bongiorno, RL Nigro, S Scalese, F Roccaforte
Applied Surface Science 420, 331-335, 2017
40 2017 Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte
Journal of Applied Physics 118 (3), 2015
40 2015 Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors P Fiorenza, M Vivona, F Iucolano, A Severino, S Lorenti, G Nicotra, ...
Materials Science in Semiconductor Processing 78, 38-42, 2018
36 2018 Influence of Ce codoping and H2 pre-loading on Er/Yb-doped fiber: Radiation response characterized by Confocal Micro-Luminescence M Vivona, S Girard, C Marcandella, T Robin, B Cadier, M Cannas, ...
Journal of Non-Crystalline Solids, 2010
24 2010 Ti/Al‐based contacts to p‐type SiC and GaN for power device applications F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, ...
physica status solidi (a) 214 (4), 1600357, 2017
23 2017 Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC M Vivona, G Greco, G Bellocchi, L Zumbo, S Di Franco, M Saggio, ...
Journal of Physics D: Applied Physics 54 (5), 055101, 2020
20 2020 Metal/semiconductor contacts to silicon carbide: Physics and technology F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Rascunà, ...
Materials Science Forum 924, 339-344, 2018
20 2018 Barrier height tuning in Ti/4H-SiC Schottky diodes G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, ...
Solid-State Electronics 186, 108042, 2021
19 2021 Influence of M Vivona, S Girard, T Robin, B Cadier, L Vaccaro, M Cannas, ...
IEEE Photonics Technology Letters 24 (6), 509-511, 2012
19 2012 Materials and processes for Schottky contacts on silicon carbide M Vivona, F Giannazzo, F Roccaforte
Materials 15 (1), 298, 2021
18 2021 Characterization of SiO2 /SiC Interfaces Annealed in N2 O or POCl3 P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, S Lorenti, ...
Materials Science Forum 778, 623-626, 2014
16 2014 Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC M Vivona, G ,Greco, M Spera, P Fiorenza, F Giannazzo, A La Magna, ...
Journal of Physics D: Applied Physics 54 (44), 445107, 2021
15 2021 
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiEmail được xác minh tại imm.cnr.it