Các bài viết có thể truy cập công khai - Chris G. Van de WalleTìm hiểu thêm
Không có ở bất kỳ nơi nào: 21
Monolayer to bulk properties of hexagonal boron nitride
D Wickramaratne, L Weston, CG Van de Walle
The Journal of Physical Chemistry C 122 (44), 25524-25529, 2018
Các cơ quan ủy nhiệm: US National Science Foundation
Role of oxygen vacancies in crystalline WO 3
W Wang, A Janotti, CG Van de Walle
Journal of Materials Chemistry C 4 (27), 6641-6648, 2016
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
Accurate and efficient band-offset calculations from density functional theory
L Weston, H Tailor, K Krishnaswamy, L Bjaalie, CG Van de Walle
Computational Materials Science 151, 174-180, 2018
Các cơ quan ủy nhiệm: US National Science Foundation
Electronic and protonic conduction in LaFeO 3
Z Zhu, H Peelaers, CG Van de Walle
Journal of Materials Chemistry A 5 (29), 15367-15379, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
Acceptor doping in the proton conductor SrZrO 3
L Weston, A Janotti, XY Cui, C Stampfl, CG Van de Walle
Physical Chemistry Chemical Physics 19 (18), 11485-11491, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
Calcium as a nonradiative recombination center in InGaN
JX Shen, D Wickramaratne, CE Dreyer, A Alkauskas, E Young, JS Speck, ...
Applied Physics Express 10 (2), 021001, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, European Commission
Role of Ga and In adatoms in the epitaxial growth of
M Wang, S Mu, CG Van de Walle
Physical Review B 102 (3), 035303, 2020
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Incorporation of Si and Sn donors in β-Ga2O3 through surface reconstructions
M Wang, S Mu, CG Van de Walle
Journal of Applied Physics 130 (18), 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Carrier-induced absorption as a mechanism for electrochromism in tungsten trioxide
W Wang, H Peelaers, JX Shen, CG Van de Walle
MRS Communications 8 (3), 926-931, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Adsorption and Diffusion of Aluminum on β-Ga2O3(010) Surfaces
M Wang, S Mu, CG Van de Walle
ACS Applied Materials & Interfaces 13 (8), 10650-10655, 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Materials and device simulations for silicon qubit design and optimization
MF Gyure, AA Kiselev, RS Ross, R Rahman, CG Van de Walle
MRS Bulletin 46, 634-641, 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Polarization properties at rocksalt/wurtzite oxide interfaces
NL Adamski, CE Dreyer, CG Van de Walle
Physical Review B 102 (20), 201301, 2020
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics
L Zhang, A Janotti, AC Meng, K Tang, CG Van de Walle, PC McIntyre
ACS Applied Materials & Interfaces 10 (6), 5140-5146, 2018
Các cơ quan ủy nhiệm: US National Science Foundation
Energy Conversion: Solid‐State Lighting
E Kioupakis, P Rinke, A Janotti, Q Yan, CG Van de Walle
Computational Approaches to Energy Materials, 231-259, 2013
Các cơ quan ủy nhiệm: German Research Foundation
Scandium-based point defect in AlN for quantum information processing
K Czelej, ME Turiansky, S Mu, CG Van de Walle
Physical Review B 110 (12), 125116, 2024
Các cơ quan ủy nhiệm: Narodowe Centrum Nauki
Intrinsic origins of broad luminescence in melt-grown single crystals
YK Frodason, A Galeckas, VS Olsen, PM Weiser, Z Galazka, ...
Physical Review Materials 8 (9), 094604, 2024
Các cơ quan ủy nhiệm: Research Council of Norway
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
S Fichtner, M Yassine, CG Van de Walle, O Ambacher
Applied Physics Letters 125 (4), 2024
Các cơ quan ủy nhiệm: European Commission
Impact of point defects on electrochromism in WO3
W Wang, H Peelaers, JX Shen, A Janotti, CG Van de Walle
Oxide-based Materials and Devices IX 10533, 218-227, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
First-principles studies of diffusion in gallium oxide
M Wang, S Mu, C Van de Walle
Oxide-based Materials and Devices XIII 12002, 70-75, 2022
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces
J Shi, A Krishnan, AFMAU Bhuiyan, YR Koh, K Huynh, A Mauze, S Mu, ...
International Electronic Packaging Technical Conference and Exhibition 85505 …, 2021
Các cơ quan ủy nhiệm: US Department of Defense
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