| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 516 | 2018 |
| Ohmic contacts to Gallium Nitride materials G Greco, F Iucolano, F Roccaforte Applied Surface Science 383, 324-345, 2016 | 366 | 2016 |
| An overview of normally-off GaN-based high electron mobility transistors F Roccaforte, G Greco, P Fiorenza, F Iucolano Materials 12 (10), 1599, 2019 | 300 | 2019 |
| Review of technology for normally-off HEMTs with p-GaN gate G Greco, F Iucolano, F Roccaforte Materials Science in Semiconductor Processing 78, 96-106, 2018 | 289 | 2018 |
| Recent advances on dielectrics technology for SiC and GaN power devices F Roccaforte, P Fiorenza, G Greco, M Vivona, RL Nigro, F Giannazzo, ... Applied Surface Science 301, 9-18, 2014 | 195 | 2014 |
| Challenges for energy efficient wide band gap semiconductor power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, A Patti, ... physica status solidi (a) 211 (9), 2063-2071, 2014 | 152 | 2014 |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ... ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017 | 99 | 2017 |
| Vertical transistors based on 2D materials: Status and prospects F Giannazzo, G Greco, F Roccaforte, SS Sonde Crystals 8 (2), 70, 2018 | 95 | 2018 |
| Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate SE Panasci, E Schilirò, G Greco, M Cannas, FM Gelardi, S Agnello, ... ACS Applied Materials & Interfaces 13 (26), 31248-31259, 2021 | 91 | 2021 |
| Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale G Fisichella, G Greco, F Roccaforte, F Giannazzo Nanoscale 6 (15), 8671-8680, 2014 | 85 | 2014 |
| Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization G Greco, F Giannazzo, A Frazzetto, V Raineri, F Roccaforte Nanoscale research letters 6, 1-7, 2011 | 85 | 2011 |
| Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs FR Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado ... IEEE Transactions on Electron Devices 63 (7), 2735 - 2741, 2016 | 77 | 2016 |
| Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte Journal of applied physics 110 (12), 2011 | 77 | 2011 |
| Critical issues for interfaces to p-type SiC and GaN in power devices F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, RL Nigro, ... Applied Surface Science 258 (21), 8324-8333, 2012 | 75 | 2012 |
| Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures F Iucolano, G Greco, F Roccaforte Applied Physics Letters 103 (20), 2013 | 73 | 2013 |
| Selective doping in silicon carbide power devices F Roccaforte, P Fiorenza, M Vivona, G Greco, F Giannazzo Materials 14 (14), 3923, 2021 | 70 | 2021 |
| Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC M Vivona, G Greco, F Giannazzo, RL Nigro, S Rascunà, M Saggio, ... Semiconductor Science and Technology 29 (7), 075018, 2014 | 63 | 2014 |
| Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ... Beilstein journal of nanotechnology 8 (1), 254-263, 2017 | 53 | 2017 |
| Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte IEEE Transactions on Electron Devices 64 (7), 2893-2899, 2017 | 52 | 2017 |
| Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ... physica status solidi (a) 214 (4), 1600460, 2017 | 51 | 2017 |
Fabrizio RoccaforteConsiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiEmail được xác minh tại imm.cnr.it