Các bài viết có thể truy cập công khai - Marc MeurisTìm hiểu thêm
Không có ở bất kỳ nơi nào: 37
Electronic structure of GeO2-passivated interfaces of (100) Ge with Al2O3 and HfO2
VV Afanas’ev, A Stesmans, A Delabie, F Bellenger, M Houssa, M Meuris
Applied Physics Letters 92 (2), 2008
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
H2S exposure of a (100) Ge surface: Evidences for a (2× 1) electrically passivated surface
M Houssa, D Nelis, D Hellin, G Pourtois, T Conard, K Paredis, ...
Applied physics letters 90 (22), 2007
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Optoelectronic properties of thin film Cu2ZnGeSe4 solar cells
S Sahayaraj, G Brammertz, B Vermang, T Schnabel, E Ahlswede, ...
Solar Energy Materials and Solar Cells 171, 136-141, 2017
Các cơ quan ủy nhiệm: European Commission
Implantation, diffusion, activation, and recrystallization of gallium implanted in preamorphized and crystalline germanium
G Hellings, C Wuendisch, G Eneman, E Simoen, T Clarysse, M Meuris, ...
Electrochemical and Solid-State Letters 12 (12), H417, 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel
G Hellings, L Witters, R Krom, J Mitard, A Hikavyy, R Loo, A Schulze, ...
2010 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2010
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Doping of Cu 2 ZnSnSe 4 solar cells with Na+ or K+ alkali ions
S Sahayaraj, G Brammertz, B Vermang, A Mule, T Schnabel, M Meuris, ...
Journal of Materials Chemistry A 6 (6), 2653-2663, 2018
Các cơ quan ủy nhiệm: European Commission
Deep level transient spectroscopy of transition metal impurities in germanium
P Clauws, J Van Gheluwe, J Lauwaert, E Simoen, J Vanhellemont, ...
Physica B: Condensed Matter 401, 188-191, 2007
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices
K Martens, WF Wang, A Dimoulas, G Borghs, M Meuris, G Groeseneken, ...
Solid-state electronics 51 (8), 1101-1108, 2007
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Electronic properties of Ge dangling bond centers at Si1− xGex/SiO2 interfaces
VV Afanas’ev, M Houssa, A Stesmans, L Souriau, R Loo, M Meuris
Applied Physics Letters 95 (22), 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Valence band energy in confined Si1− xGex (0.28< x< 0.93) layers
VV Afanas’ev, A Stesmans, L Souriau, R Loo, M Meuris
Applied physics letters 94 (17), 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Towards passivation of Ge (100) surfaces by sulfur adsorption from a (NH4) 2S solution: A combined NEXAFS, STM and LEED study
C Fleischmann, S Sioncke, S Couet, K Schouteden, B Beckhoff, M Müller, ...
Journal of the Electrochemical Society 158 (5), H589, 2011
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Impact of ammonium sulfide solution on electronic properties and ambient stability of germanium surfaces: towards Ge-based microelectronic devices
C Fleischmann, K Schouteden, M Müller, P Hönicke, B Beckhoff, ...
Journal of Materials Chemistry C 1 (26), 4105-4113, 2013
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
A fast and accurate method to study the impact of interface traps on germanium MOS performance
G Hellings, G Eneman, J Mitard, K Martens, WE Wang, T Hoffmann, ...
IEEE Transactions on Electron Devices 58 (4), 938-944, 2011
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Negative bias temperature instability on Si-passivated Ge-interface
M Aoulaiche, B Kaczer, B De Jaeger, M Houssa, K Martens, R Degraeve, ...
2008 IEEE International Reliability Physics Symposium, 358-362, 2008
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Liquid-phase adsorption of sulfur on germanium: reaction mechanism and atomic geometry
C Fleischmann, M Houssa, M Müller, B Beckhoff, HG Boyen, M Meuris, ...
The Journal of Physical Chemistry C 117 (15), 7451-7458, 2013
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
First-principles study of the electronic properties of Ge dangling bonds at (100) Si1− xGex/SiO2 interfaces
M Houssa, VV Afanas’ev, A Stesmans, G Pourtois, M Meuris, MM Heyns
Applied physics letters 95 (16), 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
ALD on high mobility channels: engineering the proper gate stack passivation
S Sioncke, HC Lin, C Adelmann, G Brammertz, A Delabie, T Conard, ...
ECS Transactions 33 (2), 9, 2010
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Investigations of the surface chemical composition and atomic structure of ex-situ sulfur passivated Ge (100)
C Fleischmann, S Sioncke, K Schouteden, K Paredis, B Beckhoff, ...
ECS Transactions 25 (3), 421, 2009
Các cơ quan ủy nhiệm: Research Foundation (Flanders)
Detrimental Impact of Na Upon Rb Postdeposition Treatments of Cu(In,Ga)Se2 Absorber Layers
J de Wild, G Birant, R Thiruvallur Eachambadi, T Kohl, DG Buldu, ...
Solar RRL 5 (9), 2100390, 2021
Các cơ quan ủy nhiệm: Research Foundation (Flanders), European Commission
Effect of Sn/Zn/Cu precursor stack thickness on two-step processed kesterite solar cells
S Ranjbar, G Brammertz, B Vermang, A Hadipour, M Sylvester, A Mule, ...
Thin Solid Films 633, 127-130, 2017
Các cơ quan ủy nhiệm: Research Foundation (Flanders), Fundação para a Ciência e a Tecnologia …
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