Các bài viết có thể truy cập công khai - Jung HanTìm hiểu thêm
Không có ở bất kỳ nơi nào: 15
Toward quantitative electrochemical nanomachining of III-nitrides
C Zhang, G Yuan, A Bruch, K Xiong, HX Tang, J Han
Journal of The Electrochemical Society 165 (10), E513, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Optical engineering of modal gain in a III-nitride laser with nanoporous GaN
G Yuan, K Xiong, C Zhang, Y Li, J Han
ACS Photonics 3 (9), 1604-1610, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Semipolar (2021) GaN and InGaN light-emitting diodes grown on sapphire
J Song, J Choi, K Xiong, Y Xie, JJ Cha, J Han
ACS Applied Materials & Interfaces 9 (16), 14088-14092, 2017
Các cơ quan ủy nhiệm: US National Science Foundation
Selective area regrowth produces nonuniform Mg doping profiles in nonplanar GaN p–n junctions
AS Chang, B Li, S Wang, M Nami, PJM Smeets, J Han, LJ Lauhon
ACS Applied Electronic Materials 3 (2), 704-710, 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy
65‐2: Invited Paper: Enabling Technology for MicroLED Display Based on Quantum Dot Color Converter
JH Kang, J Han
SID Symposium Digest of Technical Papers 50 (1), 914-916, 2019
Các cơ quan ủy nhiệm: US National Science Foundation
Selective area doping of GaN toward high-power applications
RA Ferreyra, B Li, S Wang, J Han
Journal of Physics D: Applied Physics 56 (37), 373001, 2023
Các cơ quan ủy nhiệm: US Department of Energy, Government of Argentina
New directions in GaN photonics enabled by electrochemical processes
C Zhang, G Yuan, K Xiong, SH Park, J Han
ECS Transactions 72 (5), 47, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Development of highly reflective mirrors for III-nitrides from green to UV
JH Kang, R ElAfandy, J Han
Gallium Nitride Materials and Devices XVI 11686, 7-13, 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Selective area etching and doping of GaN for high-power applications
B Li, S Wang, AS Chang, L Lauhon, Y Liu, B Raghothamachar, M Dudley, ...
ECS Transactions 104 (7), 103, 2021
Các cơ quan ủy nhiệm: US Department of Energy
Development of blue vertical cavity surface emitting lasers (VCSELs) with nanoporous GaN
J Han, R Elafandy, J Kang
ECS Transactions 102 (3), 17, 2021
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
New directions in GaN photonics
G Yuan, C Zhang, K Xiong, S Park, J Han
Gallium Nitride Materials and Devices XI 9748, 38-53, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl)
B Li, S Wang, S Frisone, J He, G Cheng, Z Zhang, R Goldman, J Han
2022 Compound Semiconductor Week (CSW), 1-2, 2022
Các cơ quan ủy nhiệm: US Department of Energy, US Department of Defense
Applications of Electrochemistry Toward Blue/Green and SWIR-Wavelength VCSELs
B Li, C Mi, R Elafandy, J Kang, J Han
ECS Transactions 112 (2), 3, 2023
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Use of electrochemistry in mini-/micro-LEDs and VCSELs
J Kang, R ElAfandy, B Li, J Song, J Han
Light-Emitting Devices, Materials, and Applications XXVI 12022, 71-77, 2022
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Development of blue VCSELs with highly reflective nanoporous GaN DBRs
JH Kang, J Han, R Elafandy
2021 IEEE Photonics Conference (IPC), 1-2, 2021
Các cơ quan ủy nhiệm: US Department of Energy, US Department of Defense
Có tại một số nơi: 35
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
Các cơ quan ủy nhiệm: German Research Foundation, Federal Ministry of Education and Research, Germany
Micro‐light emitting diode: from chips to applications
PJ Parbrook, B Corbett, J Han, TY Seong, H Amano
Laser & Photonics Reviews 15 (5), 2000133, 2021
Các cơ quan ủy nhiệm: Science Foundation Ireland, European Commission
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist
SWH Chen, YM Huang, KJ Singh, YC Hsu, FJ Liou, J Song, J Choi, ...
Photonics Research 8 (5), 630-636, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
High‐Q, Low‐Threshold Monolithic Perovskite Thin‐Film Vertical‐Cavity Lasers
S Chen, C Zhang, J Lee, J Han, A Nurmikko
Advanced Materials 29 (16), 1604781, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
High-bandwidth green semipolar (20–21) InGaN/GaN micro light-emitting diodes for visible light communication
SWH Chen, YM Huang, YH Chang, Y Lin, FJ Liou, YC Hsu, J Song, ...
Acs Photonics 7 (8), 2228-2235, 2020
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
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