Theo dõi
Jung Han
Jung Han
William Norton Professor of Electrical Engineering, Yale University
Email được xác minh tại yale.edu
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
M Kneissl, TY Seong, J Han, H Amano
nature photonics 13 (4), 233-244, 2019
11722019
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
8552006
AlGaN/GaN quantum well ultraviolet light emitting diodes
J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
3561998
Graded band gap ohmic contact to p‐ZnSe
Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
3141992
Stress evolution during metalorganic chemical vapor deposition of GaN
S Hearne, E Chason, J Han, JA Floro, J Figiel, J Hunter, H Amano, ...
Applied Physics Letters 74 (3), 1999
3051999
The band-gap bowing of alloys
SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
2841999
Low-dislocation-density GaN from a single growth on a textured substrate
CIH Ashby, CC Mitchell, J Han, NA Missert, PP Provencio, DM Follstaedt, ...
Applied Physics Letters 77 (20), 3233-3235, 2000
2412000
Stress and defect control in GaN using low temperature interlayers
H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ...
Japanese journal of applied physics 37 (12B), L1540, 1998
2341998
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
KE Waldrip, J Han, JJ Figiel, H Zhou, E Makarona, AV Nurmikko
Applied Physics Letters 78 (21), 3205-3207, 2001
2272001
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
2262002
III-Nitride based light emitting diodes and applications
TY Seong, J Han, H Amano, H Morkoç
Springer, 2017
2132017
The effect of on morphology evolution during GaN metalorganic chemical vapor deposition
J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied physics letters 71 (21), 3114-3116, 1997
2031997
Micro‐light emitting diode: from chips to applications
PJ Parbrook, B Corbett, J Han, TY Seong, H Amano
Laser & Photonics Reviews 15 (5), 2000133, 2021
1972021
Continuous-wave, room temperature, ridge waveguide green-blue diode laser
A Salokatve, H Jeon, J Ding, M Hovinen, AV Nurmikko, DC Grillo, L He, ...
Electronics Letters 29 (25), 2192-2194, 1993
1931993
Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
C Zhang, SH Park, D Chen, DW Lin, W Xiong, HC Kuo, CF Lin, H Cao, ...
ACS photonics 2 (7), 980-986, 2015
1782015
Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode
GC Hua, N Otsuka, DC Grillo, Y Fan, J Han, MD Ringle, RL Gunshor, ...
Applied physics letters 65 (11), 1331-1333, 1994
1771994
Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
C Theodoropoulos, TJ Mountziaris, HK Moffat, J Han
Journal of crystal growth 217 (1-2), 65-81, 2000
1752000
Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism
D Chen, H Xiao, J Han
Journal of Applied Physics 112 (6), 2012
1672012
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist
SWH Chen, YM Huang, KJ Singh, YC Hsu, FJ Liou, J Song, J Choi, ...
Photonics Research 8 (5), 630-636, 2020
1602020
Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
J Han, KE Waldrip, SR Lee, JJ Figiel, SJ Hearne, GA Petersen, SM Myers
Applied Physics Letters 78 (1), 67-69, 2001
1592001
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