| AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012 | 539 | 2012 |
| III–nitride UV devices MA Khan, M Shatalov, HP Maruska, HM Wang, E Kuokstis Japanese journal of applied physics 44 (10R), 7191, 2005 | 536 | 2005 |
| Deep Ultraviolet Light-Emitting Diodes M Shur, M Shatalov, A Dobrinsky, R Gaska GaN and ZnO-based Materials and Devices, 83-120, 2012 | 395 | 2012 |
| Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm JP Zhang, A Chitnis, V Adivarahan, S Wu, V Mandavilli, R Pachipulusu, ... Applied physics letters 81 (26), 4910-4912, 2002 | 276 | 2002 |
| Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire A Chitnis, C Chen, V Adivarahan, M Shatalov, E Kuokstis, V Mandavilli, ... Applied Physics Letters 84 (18), 3663, 2004 | 267 | 2004 |
| 250nmAlGaN light-emitting diodes V Adivarahan, WH Sun, A Chitnis, M Shatalov, S Wu, HP Maruska, ... Applied physics letters 85 (12), 2175-2177, 2004 | 262 | 2004 |
| Microbial UV fluence-response assessment using a novel UV-LED collimated beam system C Bowker, A Sain, M Shatalov, J Ducoste Water research 45 (5), 2011 | 245 | 2011 |
| High power AlGaN ultraviolet light emitters M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ... Semiconductor Science and Technology 29 (8), 084007, 2014 | 219 | 2014 |
| High-efficiency 269 nm emission deep ultraviolet light-emitting diodes V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ... Applied Physics Letters 84 (23), 4762-4764, 2004 | 214 | 2004 |
| Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates JW Yang, A Lunev, G Simin, A Chitnis, M Shatalov, MA Khan, ... Applied Physics Letters 76 (3), 273-275, 2000 | 162 | 2000 |
| Ultraviolet system for disinfection M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,179,703, 2015 | 148 | 2015 |
| AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA JP Zhang, X Hu, Y Bilenko, J Deng, A Lunev, MS Shur, R Gaska, ... Applied physics letters 85 (23), 5532-5534, 2004 | 147 | 2004 |
| Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells C Chen, V Adivarahan, J Yang, M Shatalov, E Kuokstis, MA Khan Japanese journal of applied physics 42 (9A), L1039, 2003 | 145 | 2003 |
| Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power W Sun, M Shatalov, J Deng, X Hu, J Yang, A Lunev, Y Bilenko, M Shur, ... Applied Physics Letters 96 (6), 2010 | 140 | 2010 |
| Storage device including ultraviolet illumination M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,034,271, 2015 | 131 | 2015 |
| Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells V Adivarahan, A Chitnis, JP Zhang, M Shatalov, JW Yang, G Simin, ... Applied Physics Letters 79 (25), 4240-4242, 2001 | 131 | 2001 |
| Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes R Jain, W Sun, J Yang, M Shatalov, X Hu, A Sattu, A Lunev, J Deng, ... Applied Physics Letters 93, 051113, 2008 | 127 | 2008 |
| Storage device including target UV illumination ranges M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ... US Patent 9,795,699, 2017 | 121 | 2017 |
| Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes A Chitnis, JP Zhang, V Adivarahan, M Shatalov, S Wu, R Pachipulusu, ... Applied physics letters 82 (16), 2565-2567, 2003 | 120 | 2003 |
| Sub-milliwatt power III-N light emitting diodes at 285 nm V Adivarahan, J Zhang, A Chitnis, W Shuai, J Sun, R Pachipulusu, ... Japanese journal of applied physics 41 (4B), L435, 2002 | 120 | 2002 |
Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicEmail được xác minh tại rpi.edu