SrNbO3 as a transparent conductor in the visible and ultraviolet spectra Y Park, J Roth, D Oka, Y Hirose, T Hasegawa, A Paul, A Pogrebnyakov, ... Communications Physics 3 (1), 102, 2020 | 78 | 2020 |
Distinct solubility and cytotoxicity regimes of paclitaxel-loaded cationic liposomes at low and high drug content revealed by kinetic phase behavior and cancer cell viability … VM Steffes, MM Murali, Y Park, BJ Fletcher, KK Ewert, CR Safinya Biomaterials 145, 242-255, 2017 | 48 | 2017 |
Negative differential capacitance in ultrathin ferroelectric hafnia S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics 6 (5), 390-397, 2023 | 39 | 2023 |
Linear and nonlinear optical probe of the ferroelectric-like phase transition in a polar metal, LiOsO3 H Padmanabhan, Y Park, D Puggioni, Y Yuan, Y Cao, L Gasparov, Y Shi, ... Applied Physics Letters 113 (12), 2018 | 38 | 2018 |
Nanoengineering room temperature ferroelectricity into orthorhombic SmMnO3 films EM Choi, T Maity, A Kursumovic, P Lu, Z Bi, S Yu, Y Park, B Zhu, R Wu, ... Nature communications 11 (1), 2207, 2020 | 28 | 2020 |
Improvement of the standard characterization method on k33 mode piezoelectric specimens Y Park, Y Zhang, M Majzoubi, T Scholehwar, E Hennig, K Uchino Sensors and Actuators A: Physical 312, 112124, 2020 | 21 | 2020 |
Compressive stress effect on the loss mechanism in a soft piezoelectric Pb (Zr, Ti) O3 H Daneshpajooh, M Choi, Y Park, T Scholehwar, E Hennig, K Uchino Review of Scientific Instruments 90 (7), 2019 | 18 | 2019 |
Analytical modeling of k33 mode partial electrode configuration for loss characterization Y Park, M Majzoubi, Y Zhang, T Scholehwar, E Hennig, K Uchino Journal of Applied Physics 127 (20), 2020 | 13 | 2020 |
An analytical interpretation of the memory window in ferroelectric field-effect transistors S Yoo, DH Choe, HJ Lee, S Jo, YS Lee, Y Park, KH Kim, D Kim, SG Nam Applied Physics Letters 123 (22), 2023 | 11 | 2023 |
DC bias electric field and stress dependence of piezoelectric parameters in lead zirconate titanate ceramics–Phenomenological approach H Daneshpajooh, Y Park, T Scholehwar, E Hennig, K Uchino Ceramics International 46 (10), 15572-15580, 2020 | 11 | 2020 |
Theory‐Guided Synthesis of a Metastable Lead‐Free Piezoelectric Polymorph LM Garten, S Dwaraknath, J Walker, JS Mangum, PF Ndione, Y Park, ... Advanced materials 30 (25), 1800559, 2018 | 10 | 2018 |
Laminated ferroelectric FET with large memory window and high reliability HJ Lee, S Nam, Y Lee, K Kim, DH Choe, S Yoo, Y Park, S Jo, D Kim, ... IEEE Transactions on Electron Devices, 2024 | 9 | 2024 |
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing T Moon, HJ Lee, S Nam, H Bae, DH Choe, S Jo, YS Lee, Y Park, JJ Yang, ... Neuromorphic Computing and Engineering 3 (2), 024001, 2023 | 8 | 2023 |
Depolarization field effect on elasticity of unpoled piezoelectric ceramics Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino Applied Materials Today 23, 101020, 2021 | 6 | 2021 |
Loss determination techniques for piezoelectrics: a review Y Park, M Choi, K Uchino Actuators 12 (5), 213, 2023 | 4 | 2023 |
Partial electrode method for loss and physical parameter determination of piezoceramics: Simplification, error investigation and applicability Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino Journal of the European Ceramic Society 41 (12), 5900-5908, 2021 | 4 | 2021 |
Physical parameter and loss determination of piezoceramics using partial electrode: k31 and k33 mode cases Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino arXiv preprint arXiv:2012.07053, 2020 | 4 | 2020 |
Determination of anisotropic intensive piezoelectric loss in polycrystalline ceramics M Choi, Y Park, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino Ceramics International 47 (11), 16309-16315, 2021 | 2 | 2021 |
Partial Electrode Configuration as a Tool for the Precise Determination of Losses and Physical Parameters of Piezoceramics Y Park, M Choi, H Daneshpajooh, T Scholehwar, E Hennig, K Uchino Journal of the Korean Institute of Electrical and Electronic Material …, 2021 | 2 | 2021 |
Highly Enhanced Memory Window of 17.8 V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer S Yoo, D Kim, DH Choe, HJ Lee, Y Lee, S Jo, Y Park, KH Kim, K Jung, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |