| A 1200-V, 60-A SiC MOSFET multichip phase-leg module for high-temperature, high-frequency applications Z Chen, Y Yao, D Boroyevich, KDT Ngo, P Mattavelli, K Rajashekara IEEE Transactions on Power Electronics 29 (5), 2307-2320, 2014 | 343 | 2014 |
| Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics Z Chen, D Boroyevich, R Burgos The 2010 International Power Electronics Conference-ECCE ASIA-, 164-169, 2010 | 295 | 2010 |
| Characterization and modeling of high-switching-speed behavior of SiC active devices Z Chen Virginia Polytechnic Institute and State University, 2009 | 287 | 2009 |
| Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs Z Chen, D Boroyevich, R Burgos, F Wang 2009 IEEE Energy Conversion Congress and Exposition, 1480-1487, 2009 | 209 | 2009 |
| Evaluation of the switching characteristics of a gallium-nitride transistor M Danilovic, Z Chen, R Wang, F Luo, D Boroyevich, P Mattavelli 2011 IEEE Energy Conversion Congress and Exposition, 2681-2688, 2011 | 171 | 2011 |
| Investigation of 1.2 kV SiC MOSFET for high frequency high power applications H Sheng, Z Chen, F Wang, A Millner 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and …, 2010 | 118 | 2010 |
| A frequency-domain study on the effect of DC-link decoupling capacitors Z Chen, D Boroyevich, P Mattavelli, K Ngo 2013 IEEE Energy Conversion Congress and Exposition, 1886-1893, 2013 | 111 | 2013 |
| High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs C DiMarino, Z Chen, M Danilovic, D Boroyevich, R Burgos, P Mattavelli 2013 IEEE Energy Conversion Congress and Exposition, 3235-3242, 2013 | 87 | 2013 |
| Performance evaluation of SiC power MOSFETs for high-temperature applications Z Chen, Y Yao, M Danilovic, D Boroyevich 2012 15th International Power Electronics and Motion Control Conference (EPE …, 2012 | 84 | 2012 |
| A novel hybrid packaging structure for high-temperature SiC power modules R Wang, Z Chen, D Boroyevich, L Jiang, Y Yao, K Rajashekara IEEE Transactions on Industry Applications 49 (4), 1609-1618, 2013 | 80 | 2013 |
| Characterization of encapsulants for high-voltage high-temperature power electronic packaging Y Yao, Z Chen, GQ Lu, D Boroyevich, KDT Ngo IEEE Transactions on Components, Packaging and Manufacturing Technology 2 (4 …, 2012 | 80 | 2012 |
| Design considerations for GaN HEMT multichip halfbridge module for high-frequency power converters F Luo, Z Chen, L Xue, P Mattavelli, D Boroyevich, B Hughes 2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, 537-544, 2014 | 79 | 2014 |
| An adaptive dead-time control scheme for high-switching-frequency dual-active-bridge converter J Li, Z Chen, Z Shen, P Mattavelli, J Liu, D Boroyevich 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012 | 76 | 2012 |
| An ultra-fast SiC phase-leg module in modified hybrid packaging structure Z Chen, Y Yao, D Boroyevich, K Ngo, W Zhang 2014 IEEE Energy Conversion Congress and Exposition (ECCE), 2880-2886, 2014 | 61 | 2014 |
| Design considerations of a fast 0-Ω gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration R Burgos, Z Chen, D Boroyevich, F Wang 2009 IEEE Energy Conversion Congress and Exposition, 2293-2300, 2009 | 61 | 2009 |
| Modeling and simulation of 2 kV 50 A SiC MOSFET/JBS power modules Z Chen, R Burgos, D Boroyevich, F Wang, S Leslie Electric Ship Technologies Symposium, 2009. ESTS 2009. IEEE, 393-399, 2009 | 61 | 2009 |
| Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications Z Chen, Y Yao, W Zhang, D Boroyevich, K Ngo, P Mattavelli, R Burgos the 1st IEEE workshop on wide bandgap power devices and applications, 52-59, 2013 | 56 | 2013 |
| Modularized design consideration of a general-purpose, high-speed phase-leg PEBB based on SiC MOSFETs Z Chen, M Danilovic, D Boroyevich, Z Shen Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 55 | 2011 |
| Electrical integration of SiC power devices for High-Power-Density applications Z Chen Virginia Polytechnic Institute and State University, 2013 | 53 | 2013 |
| Characterization and comparison of 1.2 kV SiC power semiconductor devices C DiMarino, Z Chen, D Boroyevich, R Burgos, P Mattavelli 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 45 | 2013 |
Dushan BoroyevichVirginia TechEmail được xác minh tại vt.edu
