Theo dõi
Mike Krames
Mike Krames
Arkesso, LLC; ORCID 0000-0001-8545-851X
Email được xác minh tại arkesso.com - Trang chủ
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Status and future of high-power light-emitting diodes for solid-state lighting
MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ...
Journal of display technology 3 (2), 160-175, 2007
25012007
Auger recombination in InGaN measured by photoluminescence
YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ...
Applied Physics Letters 91 (14), 2007
14372007
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
8852001
Highly efficient all‐nitride phosphor‐converted white light emitting diode
R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ...
physica status solidi (a) 202 (9), 1727-1732, 2005
6862005
High-power phosphor-converted light-emitting diodes based on III-nitrides
R Mueller-Mach, GO Mueller, MR Krames, T Trottier
IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002
6782002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
6621999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2
NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ...
Applied Physics Letters 91 (24), 2007
5622007
History of gallium–nitride-based light-emitting diodes for illumination
S Nakamura, MR Krames
Proceedings of the IEEE 101 (10), 2211-2220, 2013
5102013
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
5082004
Research challenges to ultra‐efficient inorganic solid‐state lighting
JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ...
Laser & Photonics Reviews 1 (4), 307-333, 2007
4772007
Ordered interface texturing for a light emitting device
MR Krames, FA Kish Jr
US Patent 5,779,924, 1998
4751998
Luminescent ceramic for a light emitting device
GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ...
US Patent 7,361,938, 2008
444*2008
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ...
Applied Physics Letters 89 (7), 2006
4422006
Phosphor-converted light emitting device
WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth
US Patent 6,642,652, 2003
4282003
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes
A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ...
Applied Physics Letters 92 (5), 2008
4262008
III-Phospide and III-Arsenide flip chip light-emitting devices
MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ...
US Patent 6,784,463, 2004
4002004
History, development, and applications of high-brightness visible light-emitting diodes
RD Dupuis, MR Krames
Journal of lightwave technology 26 (9), 1154-1171, 2008
3842008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth
US Patent 6,576,488, 2003
3562003
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3262002
Polarized semiconductor light emitting device
MH Keuper, MR Krames, GO Mueller
US Patent 7,408,201, 2008
3212008
Hệ thống không thể thực hiện thao tác ngay bây giờ. Hãy thử lại sau.
Bài viết 1–20