| Fully stretchable optoelectronic sensors based on colloidal quantum dots for sensing photoplethysmographic signals TH Kim, CS Lee, S Kim, J Hur, S Lee, KW Shin, YZ Yoon, MK Choi, ... Acs Nano 11 (6), 5992-6003, 2017 | 149 | 2017 |
| High‐throughput growth of wafer‐scale monolayer transition metal dichalcogenide via vertical Ostwald ripening M Seol, MH Lee, H Kim, KW Shin, Y Cho, I Jeon, M Jeong, HI Lee, J Park, ... Advanced Materials 32 (42), 2003542, 2020 | 105 | 2020 |
| Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ... Nano letters 18 (8), 4878-4884, 2018 | 44 | 2018 |
| The effects of low temperature buffer layer on the growth of pure Ge on Si (001) KW Shin, HW Kim, J Kim, C Yang, S Lee, E Yoon Thin Solid Films 518 (22), 6496-6499, 2010 | 32 | 2010 |
| Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate S Oh, DH Jun, KW Shin, IH Choi, SH Jung, JH Choi, W Park, Y Park, ... IEEE Journal of Photovoltaics 6 (4), 1031 - 1035, 2016 | 29 | 2016 |
| Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ... Advanced Electronic Materials 4 (6), 1700624, 2018 | 22 | 2018 |
| High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition HW Kim, KW Shin, GD Lee, E Yoon Thin Solid Films 517 (14), 3990-3994, 2009 | 19 | 2009 |
| Wiring structure and electronic device employing the same C Lee, S Hyeonjin, S Park, IM Donghyun, H Park, S Keunwook, J Lee, ... US Patent App. 14/625,282, 2015 | 16 | 2015 |
| Method of forming nanocrystalline graphene, and device including nanocrystalline graphene A Jung, S Keunwook, KE Byun, S Hyeonjin, H Lim, NAM Seunggeol, ... US Patent 10,850,985, 2020 | 14 | 2020 |
| Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layers SG Nam, Y Cho, MH Lee, KW Shin, C Kim, K Yang, M Jeong, HJ Shin, ... 2D Materials 5 (4), 041004, 2018 | 13 | 2018 |
| Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics C Yang, S Lee, K Wook Shin, S Oh, J Park, CZ Kim, WK Park, S Ha, ... Applied Physics Letters 99 (9), 2011 | 13 | 2011 |
| Lattice contraction with boron doping in fully strained SiGe epitaxial layers KW Shin, S Song, HW Kim, GD Lee, E Yoon Japanese Journal of Applied Physics 57 (6), 065504, 2018 | 12 | 2018 |
| Effects of growth temperature on surface morphology of InP grown on patterned Si (0 0 1) substrates SM Lee, YJ Cho, JB Park, KW Shin, E Hwang, S Lee, MJ Lee, SH Cho, ... Journal of Crystal Growth 416, 113-117, 2015 | 12 | 2015 |
| Study of Selective Graphene Growth on Non-Catalytic Hetero-Substrates KW Shin, Y Cho, Y Lee, H Lee, SG Nam, KE Byun, CS Lee, S Park, ... 2D Materials 7 (1), 011002, 2019 | 9 | 2019 |
| Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence C Yang, S Lee, KW Shin, S Oh, D Moon, SD Kim, YW Kim, CZ Kim, ... Journal of crystal growth 370, 168-172, 2013 | 9 | 2013 |
| Method of forming graphene S Hyeonjin, S Keunwook, KIM Changhyun, NAM Seunggeol, KE Byun, ... US Patent 11,572,278, 2023 | 8 | 2023 |
| Method of pre-treating substrate and method of directly forming graphene using the same S Keunwook, J Lee, NAM Seunggeol, S Hyeonjin, H Lim, A Jung, ... US Patent 12,217,958, 2025 | 7 | 2025 |
| Methods and apparatuses for forming graphene S Hyunjae, E Lee, C Lee, KIM Changhyun, KE Byun, S Keunwook, ... US Patent App. 16/860,465, 2020 | 7 | 2020 |
| Graphene structure and method of forming graphene structure E Lee, KE Byun, S Hyunjae, S Hyeonjin, KIM Changhyun, S Keunwook, ... US Patent 11,626,282, 2023 | 6 | 2023 |
| Interconnect structure and electronic device employing the same NAM Seunggeol, S Hyeonjin, S Keunwook, KIM Changhyun, KE Byun, ... US Patent 11,069,619, 2021 | 6 | 2021 |
Lee, Chang SeokSAIT(Samsung Advanced Institute of Technology)Email được xác minh tại polytechnique.edu