Các bài viết có thể truy cập công khai - Jiahao KangTìm hiểu thêm
Không có ở bất kỳ nơi nào: 4
Effect of band-tails on the subthreshold performance of 2D tunnel-FETs
H Zhang, W Cao, J Kang, K Banerjee
2016 IEEE International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2016
Các cơ quan ủy nhiệm: US National Science Foundation
Room temperature 2D memristive transistor with optical short-term plasticity
X Xie, J Kang, Y Gong, PM Ajayan, K Banerjee
2017 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Computational study of gate-induced drain leakage in 2D-semiconductor field-effect transistors
J Kang, W Cao, A Pal, S Pandey, S Kramer, R Hill, G Sandhu, K Banerjee
2017 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2017
Các cơ quan ủy nhiệm: US Department of Defense
35‐4: Carbon Nanotube Thin‐Film Transistors for Active‐Matrix Micro‐LED Display–Device Performances, Bias Stress Stability and Compact Modeling
Y Gong, Z Zhi, A Zheng, C Ouyang, Y Li, J Yin, Y Cao, H Xu, Y Zhou, ...
SID Symposium Digest of Technical Papers 54 (1), 510-513, 2023
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Có tại một số nơi: 11
A subthermionic tunnel field-effect transistor with an atomically thin channel
D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ...
Nature 526 (7571), 91-95, 2015
Các cơ quan ủy nhiệm: US National Institutes of Health
Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects
J Jiang, J Kang, W Cao, X Xie, H Zhang, JH Chu, W Liu, K Banerjee
Nano letters 17 (3), 1482-1488, 2017
Các cơ quan ủy nhiệm: US Department of Defense
On-chip intercalated-graphene inductors for next-generation radio frequency electronics
J Kang, Y Matsumoto, X Li, J Jiang, X Xie, K Kawamoto, M Kenmoku, ...
Nature Electronics 1 (1), 46-51, 2018
Các cơ quan ủy nhiệm: US Department of Defense, National Natural Science Foundation of China
2-D layered materials for next-generation electronics: Opportunities and challenges
W Cao, J Jiang, X Xie, A Pal, JH Chu, J Kang, K Banerjee
IEEE Transactions on Electron Devices 65 (10), 4109-4121, 2018
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Energy, US Department of …
Boosting Hydrogen Evolution Performance of MoS2 by Band Structure Engineering
J Li, J Kang, Q Cai, W Hong, C Jian, W Liu, K Banerjee
Advanced Materials Interfaces 4 (16), 1700303, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, Chinese Academy of Sciences, National …
Characterization of FeCl3Intercalation Doped CVD Few-Layer Graphene
W Liu, J Kang, K Banerjee
IEEE Electron Device Letters 37 (9), 1246-1249, 2016
Các cơ quan ủy nhiệm: US Department of Energy
Designing artificial 2D crystals with site and size controlled quantum dots
X Xie, J Kang, W Cao, JH Chu, Y Gong, PM Ajayan, K Banerjee
Scientific reports 7 (1), 9965, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Characterization of self-heating and current-carrying capacity of intercalation doped graphene-nanoribbon interconnects
J Jiang, J Kang, K Banerjee
2017 IEEE International Reliability Physics Symposium (IRPS), 6B-1.1-6B-1.6, 2017
Các cơ quan ủy nhiệm: US Department of Defense
All-carbon interconnect scheme integrating graphene-wires and carbon-nanotube-vias
J Jiang, J Kang, JH Chu, K Banerjee
2017 IEEE International Electron Devices Meeting (IEDM), 14.3. 1-14.3. 4, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
High-performance thin-film transistors based on aligned carbon nanotubes for mini-and micro-LED displays
M Xi, F Liu, X Zhu, Y Li, L Bai, X Chen, Y Gong, Y Guo, Y Zhou, L Peng, ...
Carbon 218, 118718, 2024
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
Recent advances in touch sensors for flexible displays
C Ouyang, D Liu, K He, J Kang
IEEE Open Journal of Nanotechnology 4, 36-46, 2022
Các cơ quan ủy nhiệm: National Natural Science Foundation of China
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