Growth of self-assembled n-alkyltrichlorosilane films on Si (100) investigated by atomic force microscopy K Bierbaum, M Grunze, AA Baski, LF Chi, W Schrepp, H Fuchs
Langmuir 11 (6), 2143-2150, 1995
300 1995 The structure of silicon surfaces from (001) to (111) AA Baski, SC Erwin, LJ Whitman
Surface Science 392 (1-3), 69-85, 1997
270 1997 Aluminum on the Si (100) surface: Growth of the first monolayer J Nogami, AA Baski, CF Quate
Physical Review B 44 (3), 1415, 1991
220 1991 The origin of the superstructure in Bi2Sr2CaCu2O8+ δ as revealed by scanning tunneling microscopy MD Kirk, J Nogami, AA Baski, DB Mitzi, A Kapitulnik, TH Geballe, ...
Science 242 (4886), 1673-1675, 1988
216 1988 Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays D Ye, S Moussa, JD Ferguson, AA Baski, MS El-Shall
Nano letters 12 (3), 1265-1268, 2012
173 2012 Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si (001) 2× 1-Sb M Richter, JC Woicik, J Nogami, P Pianetta, KE Miyano, AA Baski, ...
Physical review letters 65 (27), 3417, 1990
167 1990 A stable high-index surface of silicon: Si (5 5 12) AA Baski, LJ Whitman, SC Erwin
Science 269 (5230), 1556-1560, 1995
163 1995 √ 3×√ 3→ 6× 6 phase transition on the Au/Si (111) surface J Nogami, AA Baski, CF Quate
Physical Review Letters 65 (13), 1611, 1990
146 1990 Surface photovoltage in undoped n-type GaN MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 2010
136 2010 Epitaxial growth of silver on mica as studied by AFM and STM AA Baski, H Fuchs
Surface Science 313 (3), 275-288, 1994
136 1994 Indium-induced reconstructions of the Si (100) surface AA Baski, J Nogami, CF Quate
Physical Review B 43 (11), 9316, 1991
133 1991 Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
115 2001 Quasiperiodic nanoscale faceting of high-index Si surfaces AA Baski, LJ Whitman
Physical review letters 74 (6), 956, 1995
115 1995 Epitaxial lateral overgrowth of (112 2) semipolar GaN on (11 00) m-plane sapphire by metalorganic chemical vapor deposition X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran
Applied physics letters 90 (18), 2007
113 2007 Structure of the Sb-terminated Si (100) surface J Nogami, AA Baski, CF Quate
111 * Structure and Stability of SC Erwin, AA Baski, LJ Whitman
Physical review letters 77 (4), 687, 1996
104 1996 Si (111)-5× 1-Au reconstruction as studied by scanning tunneling microscopy AA Baski, J Nogami, CF Quate
Physical Review B 41 (14), 10247, 1990
104 1990 Gallium growth and reconstruction on the Si (100) surface AA Baski, J Nogami, CF Quate
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990
103 1990 Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy S Chevtchenko, X Ni, Q Fan, AA Baski, H Morkoç
Applied physics letters 88 (12), 2006
94 2006 Tin-induced reconstructions of the Si (100) surface AA Baski, CF Quate, J Nogami
Physical Review B 44 (20), 11167, 1991
94 1991