Ambipolar electrical transport in semiconducting single-wall carbon nanotubes R Martel, V Derycke, C Lavoie, I Appenzeller, KK Chan, J Tersoff, ...
Phys. Rev. Lett. 87, 256805, 2001
1079 2001 Self-aligned process for nanotube/nanowire FETs P Avouris, RA Carruthers, J Chen, CGMM Detavernier, C Lavoie, ...
US Patent 8,119,466, 2012
562 2012 Towards implementation of a nickel silicide process for CMOS technologies C Lavoie, FM d’Heurle, C Detavernier, C Cabral Jr
Microelectronic Engineering 70 (2-4), 144-157, 2003
510 2003 Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ...
IEEE Electron Device Letters 31 (7), 731-733, 2010
314 2010 Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation J Kedzierski, E Nowak, T Kanarsky, Y Zhang, D Boyd, R Carruthers, ...
Digest. International Electron Devices Meeting,, 247-250, 2002
283 2002 Thin film reaction of transition metals with germanium S Gaudet, C Detavernier, AJ Kellock, P Desjardins, C Lavoie
Journal of Vacuum Science & Technology A 24 (3), 474-485, 2006
278 2006 High- MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ...
IEEE Electron Device Letters 31 (4), 275-277, 2010
266 2010 Field-emission SEM imaging of compositional and doping layer semiconductor superlattices DD Perovic, MR Castell, A Howie, C Lavoie, T Tiedje, JSW Cole
Ultramicroscopy 58 (1), 104-113, 1995
238 1995 An off-normal fibre-like texture in thin films on single-crystal substrates C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ...
Nature 426 (6967), 641-645, 2003
234 2003 In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon W Knaepen, C Detavernier, RL Van Meirhaeghe, JJ Sweet, C Lavoie
Thin Solid Films 516 (15), 4946-4952, 2008
198 2008 Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition H Kim, C Cabral Jr, C Lavoie, SM Rossnagel
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
172 2002 Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films C Lavoie, C Detavernier, C Cabral Jr, FM d’Heurle, AJ Kellock, ...
Microelectronic engineering 83 (11-12), 2042-2054, 2006
149 2006 High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation D Deduytsche, C Detavernier, RL Van Meirhaeghe, C Lavoie
Journal of applied physics 98 (3), 2005
139 2005 In situ x-ray diffraction study of metal induced crystallization of amorphous germanium W Knaepen, S Gaudet, C Detavernier, RL Van Meirhaeghe, JJ Sweet, ...
Journal of Applied Physics 105 (8), 2009
129 2009 FinFET performance advantage at 22nm: An AC perspective M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ...
2008 Symposium on VLSI Technology, 12-13, 2008
124 2008 Influence of Pt addition on the texture of NiSi on Si (001) C Detavernier, C Lavoie
applied physics letters 84 (18), 3549-3551, 2004
121 2004 Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap SR Johnson, C Lavoie, MK Nissen, JT Tiedje
US Patent 5,388,909, 1995
120 1995 Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy SR Johnson, C Lavoie, T Tiedje, JA Mackenzie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
116 1993 Two gates are better than one [double-gate MOSFET process] PM Solomon, KW Guarini, Y Zhang, K Chan, EC Jones, GM Cohen, ...
IEEE circuits and devices magazine 19 (1), 48-62, 2003
115 2003 Triple-self-aligned, planar double-gate MOSFETs: devices and circuits KW Guarini, PM Solomon, Y Zhang, KK Chan, EC Jones, GM Cohen, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
107 2001 Jean Jordan-SweetIBM T.J. Watson Research CenterEmail được xác minh tại us.ibm.com
Ahmet S. OzcanSemiotic AIEmail được xác minh tại semiotic.ai
Guy CohenResearcher, IBM T.J. Watson Research Center, Yorktown Height, New YorkEmail được xác minh tại us.ibm.com
Zhen ZhangProfessor of Solid-State Electronics, Uppsala UniversityEmail được xác minh tại angstrom.uu.se
Roland Van Meirhaegheprofessor University of GentEmail được xác minh tại ugent.be
Paul SolomonIBMEmail được xác minh tại us.ibm.comThomas TiedjeElectrical and Computer Engineering, University of Victoria, Victoria, BCEmail được xác minh tại uvic.ca
Stephen RossnagelUVA Dept Mat. Sci.Email được xác minh tại virginia.edu
Phaedon AvourisIBM Fellow, Emeritus and University of Minnesota, MinneapolisEmail được xác minh tại umn.edu
Richard MartelProfessor of Chemistry, Universite de MontrealEmail được xác minh tại umontreal.ca
Kathryn GuariniIBMEmail được xác minh tại us.ibm.com
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityEmail được xác minh tại purdue.edu
Shane R JohnsonArizona State UniversityEmail được xác minh tại asu.edu
Dae-gyu ParkSenior Manager, IBM T.J.Watson Research CenterEmail được xác minh tại us.ibm.com
