Các bài viết có thể truy cập công khai - Alexander ShlugerTìm hiểu thêm
Không có ở bất kỳ nơi nào: 21
Grain boundary mediated leakage current in polycrystalline HfO2 films
K McKenna, A Shluger, V Iglesias, M Porti, M Nafría, M Lanza, G Bersuker
Microelectronic Engineering 88 (7), 1272-1275, 2011
Các cơ quan ủy nhiệm: Government of Spain
Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic
SR Bradley, AL Shluger, G Bersuker
Physical Review Applied 4 (6), 064008, 2015
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection
DZ Gao, AM El-Sayed, AL Shluger
Nanotechnology 27 (50), 505207, 2016
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Functionalized truxenes: adsorption and diffusion of single molecules on the KBr (001) surface
B Such, T Trevethan, T Glatzel, S Kawai, L Zimmerli, E Meyer, AL Shluger, ...
ACS nano 4 (6), 3429-3439, 2010
Các cơ quan ủy nhiệm: Swiss National Science Foundation
The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices
SR Bradley, KP McKenna, AL Shluger
Microelectronic engineering 109, 346-350, 2013
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Organic molecules reconstruct nanostructures on ionic surfaces
T Trevethan, B Such, T Glatzel, S Kawai, AL Shluger, E Meyer, ...
Small 7 (9), 1264-1270, 2011
Các cơ quan ủy nhiệm: Swiss National Science Foundation
Defects in oxides in electronic devices
A Shluger
Handbook of materials modeling: applications: current and emerging materials …, 2020
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Determining adsorption geometry, bonding, and translational pathways of a metal–organic complex on an oxide surface: Co-Salen on NiO (001)
A Schwarz, DZ Gao, K Lammle, J Grenz, MB Watkins, AL Shluger, ...
The Journal of Physical Chemistry C 117 (2), 1105-1112, 2013
Các cơ quan ủy nhiệm: German Research Foundation
Defect creation in amorphous HfO2 facilitated by hole and electron injection
J Strand, M Kaviani, AL Shluger
Microelectronic Engineering 178, 279-283, 2017
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Models of oxygen vacancy defects involved in degradation of gate dielectrics
AL Shluger, KP McKenna
2013 IEEE International Reliability Physics Symposium (IRPS), 5A. 1.1-5A. 1.9, 2013
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Structure and properties of electronic and hole centers in CsBr from theoretical calculations
MTE Halliday, WP Hess, AL Shluger
Journal of Physics: Condensed Matter 27 (24), 245501, 2015
Các cơ quan ủy nhiệm: US Department of Energy, UK Engineering and Physical Sciences Research Council
Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics
S Kiyohara, D Mora-Fonz, A Shluger, Y Kumagai, F Oba
The Journal of Physical Chemistry C 126 (44), 18833-18838, 2022
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Activation of electrically silent defects in the high-k gate stacks
D Veksler, G Bersuker, MB Watkins, A Shluger
2014 IEEE International Reliability Physics Symposium, 5B. 3.1-5B. 3.7, 2014
Các cơ quan ủy nhiệm: European Commission
Mechanisms of photodesorption of Br atoms from CsBr surfaces
MTE Halliday, AG Joly, WP Hess, PV Sushko, AL Shluger
The Journal of Physical Chemistry C 117 (26), 13502-13509, 2013
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: a Theoretical Study
J Cottom, G Gruber, G Pobegen, T Aichinger, AL Shluger
Materials Science Forum 858, 257-260, 2016
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
Tuning photoluminescence properties of alkaline-earth oxide nanoparticles by site-selective functionalization and doping
PV Sushko, K McKenna, A Shluger, O Diwald
ECS Transactions 25 (9), 131, 2009
Các cơ quan ủy nhiệm: Austrian Science Fund
Evidence for an Abrupt Transition between SiO2 and SiC from EELS and Ab Initio Modelling
J Cottom, MV Mistry, G Gruber, G Pobegen, T Aichinger, AL Shluger
Materials Science Forum 963, 199-203, 2019
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
The structure and properties of clean steps at oxide surfaces
MJ Wolf, AL Shluger
Defects at Oxide Surfaces, 191-214, 2015
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council, European Commission
Characterizing Defects Responsible for Charge Transport Characteristics at Interfaces of Nano-Thick Materials Stacks
G Bersuker, MB Watkins, AL Shluger
Oxide Materials at the Two-Dimensional Limit, 311-333, 2016
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council, European Commission
Atomistic Modeling of Defects Implicated in the Bias Temperature Instability
AM El-Sayed, AL Shluger
Bias Temperature Instability for Devices and Circuits, 305-321, 2013
Các cơ quan ủy nhiệm: UK Engineering and Physical Sciences Research Council
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