| (ESI Highly Cited Papers)Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Single-Atom Catalyst H Niu, Z Zhang*, X Wang, X Wan, C Shao, Y Guo* Advanced Functional Materials 31 (11), 2008533, 2021 | 421* | 2021 |
| (ESI Highly Cited Papers)A durable and pH-universal self-standing MoC–Mo2C heterojunction electrode for efficient hydrogen evolution reaction W Liu, X Wang, F Wang, K Du, Z Zhang, Y Guo, H Yin, D Wang Nature Communications 12 (1), 6776, 2021 | 253* | 2021 |
| Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment Z Zhang, Q Qian, B Li, KJ Chen ACS Applied Materials & Interfaces 10 (20), 17419-17426, 2018 | 252 | 2018 |
| (ESI Highly Cited Papers) Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity H Niu, X Wang, C Shao, Z Zhang*, Y Guo* ACS Sustainable Chemistry & Engineering 8 (36), 13749, 2020 | 211 | 2020 |
| (ESI Highly Cited Papers) Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst H Niu, X Wan, X Wang, C Shao, J Robertson, Z Zhang*, Y Guo* ACS Sustainable Chemistry & Engineering 9 (9), 3590, 2021 | 196 | 2021 |
| Revealing the oxygen reduction reaction activity origin of single atoms supported on g-C3N4 monolayers: a first-principles study H Niu, X Wang, C Shao, Y Liu, Z Zhang*, Y Guo* Journal of Materials Chemistry A 8, 6555-6563, 2020 | 178 | 2020 |
| A feasible strategy for identifying single-atom catalysts towards electrochemical NO-to-NH3 conversion H Niu#, Z Zhang#, X Wang, X Wan, C Kuai*, Y Guo* Small 17 (36), 2102396, 2021 | 131 | 2021 |
| Integration of LPCVD-SiNxgate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime M Hua, Z Zhang, J Wei, J Lei, G Tang, K Fu, Y Cai, B Zhang, KJ Chen 2016 IEEE International Electron Devices Meeting (IEDM), 10.4. 1-10.4. 4, 2016 | 130 | 2016 |
| Machine-Learning-Accelerated Catalytic Activity Predictions of Transition Metal Phthalocyanine Dual-Metal-Sites Catalysts for CO2 Reduction X Wan, Z Zhang*, H Niu, Y Yin, C Kuai, J Wang, C Shao, Y Guo* The Journal of Physical Chemistry Letters 12, 6111–6118, 2021 | 118 | 2021 |
| Tunable Properties of Novel Ga2O3 Monolayer for Electronics and Optoelectronics Applications Y Liao#, Z Zhang#*, Z Gao, Q Qian, M Hua* ACS Applied Materials & Interfaces 12 (27), 30659, 2020 | 118 | 2020 |
| Low on-resistance normally-off GaN double-channel metal-oxide-semiconductor high-electron-mobility transistor J Wei, S Liu, B Li, X Tang, Y Lu, C Liu, M Hua, Z Zhang, G Tang, KJ Chen IEEE Electron Device Letters 36 (12), 1287-1290, 2015 | 101 | 2015 |
| Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer M Hua, J Wei, G Tang, Z Zhang, Q Qian, X Cai, N Wang, KJ Chen IEEE Electron Device Letters 38 (7), 929-932, 2017 | 90 | 2017 |
| High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ... IEEE Electron Device Letters 37 (12), 1617-1620, 2016 | 90 | 2016 |
| High-speed, high-reliability GaN power device with integrated gate driver G Tang, MH Kwan, Z Zhang, J He, J Lei, RY Su, FW Yao, YM Lin, JL Yu, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 88 | 2018 |
| Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric … J He, M Hua, Z Zhang, KJ Chen IEEE Transactions on Electron Devices 65 (8), 3185-3191, 2018 | 82 | 2018 |
| Transition Metal and N Doping on AlP Monolayers for Bifunctional Oxygen Electrocatalysts: Density Functional Theory Study Assisted by Machine Learning Description X Liu, Y Zhang, W Wang*, Y Chen, W Xiao, T Liu, Z Zhong, Z Luo, Z Ding*, ... ACS Applied Materials & Interfaces 14 (1), 1249–1259, 2022 | 80 | 2022 |
| 650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen IEEE Electron Device Letters 39 (2), 260-263, 2017 | 78 | 2017 |
| (Back cover)Two-Dimensional Gallium Oxide Monolayer for Gas Sensing Application J Zhao#*, X Huang#, Y Yin#, Y Liao, H Mo, Q Qian, Y Guo, X Chen, ... The Journal of Physical Chemistry Letters 12 (24), 5813–5820, 2021 | 69 | 2021 |
| Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer Q Qian, B Li, M Hua, Z Zhang, F Lan, Y Xu, R Yan, KJ Chen Scientific reports 6 (1), 27676, 2016 | 69 | 2016 |
| Ultra-low lattice thermal conductivity of monolayer penta-silicene and penta-germanene Z Gao, Z Zhang, G Liu, JS Wang Physical Chemistry Chemical Physics 21, 26033-26040, 2019 | 68 | 2019 |
郭宇铮Yuzheng Guo武汉大学Wuhan UniversityEmail được xác minh tại whu.edu.cn
